Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.

RRAM技術在過去十年中取得了顯著進展，成為下一代非揮發性記憶體(NVM)的競爭候選者。本講座是一個從器件製造到陣列架構設計的金屬氧化物基RRAM技術的全面教程。總結了最先進的RRAM器件性能、特性和建模技術，並討論了將RRAM集成到帶有外圍電路的大規模陣列的設計考慮。第2章介紹了RRAM器件製造技術和消除成形過程的方法，並展示了其可擴展性達到次-10奈米的範圍。然後介紹了器件性能，如編程速度、變異性控制和多級操作，最後討論了可靠性問題，如循環耐久性和數據保留。第3章討論了RRAM的物理機制，以及觀察導電絲和研究電子導電過程的材料特性技術。它還介紹了用於模擬導電絲演變的數值器件建模技術，以及用於電路級設計的緊湊器件建模技術。第4章討論了兩種常見的RRAM陣列架構，即單晶體-單電阻器(1T1R)和交叉點架構與選擇器。介紹了寫入/讀取方案，並討論了外圍電路設計考慮。最後，介紹了一種用於構建超高密度RRAM陣列的三維集成方法。第5章是一個簡要的總結，並展望了RRAM在NVM應用之外的潛在新應用。