Semiconductor Process Reliability in Practice (Hardcover)

Zhenghao Gan, Waisum Wong, Juin J. Liou

  • 出版商: McGraw-Hill Education
  • 出版日期: 2012-10-31
  • 售價: $5,880
  • 貴賓價: 9.5$5,586
  • 語言: 英文
  • 頁數: 624
  • 裝訂: Hardcover
  • ISBN: 007175427X
  • ISBN-13: 9780071754279
  • 相關分類: 半導體
  • 海外代購書籍(需單獨結帳)

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商品描述

Proven processes for ensuring semiconductor device reliability

Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.

Coverage includes:

  • Basic device physics
  • Process flow for MOS manufacturing
  • Measurements useful for device reliability characterization
  • Hot carrier injection
  • Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB)
  • Negative bias temperature instability
  • Plasma-induced damage
  • Electrostatic discharge protection of integrated circuits
  • Electromigration
  • Stress migration
  • Intermetal dielectric breakdown

 

商品描述(中文翻譯)

「確保半導體元件可靠性的驗證流程」

由該領域的專家共同撰寫,《實踐中的半導體製程可靠性》詳細描述和分析了半導體元件製造的可靠性和驗證,並討論了其基本物理和理論。本書涵蓋了初始規格定義、測試結構設計、測試結構數據分析以及最終製程驗證。本實用且全面的指南提供了用於驗證前端製程元件和後端互連的測試結構設計的實際案例。

主要內容包括:
- 基本元件物理學
- MOS製程流程
- 用於元件可靠性表徵的測量
- 熱載子注入
- 閘極氧化物完整性(GOI)和時間相依性介電損壞(TDDB)
- 負偏溫度不穩定性
- 等離子體誘導損壞
- 集成電路的靜電放電保護
- 電遷移
- 應力遷移
- 金屬間介電損壞