Semiconductor Process Reliability in Practice (Hardcover)
暫譯: 半導體製程可靠性實務 (精裝版)
Zhenghao Gan, Waisum Wong, Juin J. Liou
- 出版商: McGraw-Hill Education
- 出版日期: 2012-10-31
- 售價: $6,570
- 貴賓價: 9.5 折 $6,242
- 語言: 英文
- 頁數: 624
- 裝訂: Hardcover
- ISBN: 007175427X
- ISBN-13: 9780071754279
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相關分類:
半導體
海外代購書籍(需單獨結帳)
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相關主題
商品描述
Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
商品描述(中文翻譯)
確保半導體裝置可靠性的驗證流程
本書由該領域的專家共同撰寫,半導體製程可靠性實務 包含了對半導體裝置製造的可靠性和驗證的詳細描述與分析,並討論了其背後的物理學和理論。書中涵蓋了初始規格定義、測試結構設計、測試結構數據分析以及最終的製程驗證。這本實用且全面的指南提供了針對前端裝置和後端互連的測試結構設計的實際案例。
內容包括:
- 基本裝置物理
- MOS 製造的製程流程
- 對裝置可靠性特徵化有用的測量
- 熱載子注入
- 閘極氧化層完整性 (GOI) 和時間依賴性介電層擊穿 (TDDB)
- 負偏壓溫度不穩定性
- 等離子體引起的損傷
- 集成電路的靜電放電保護
- 電遷移
- 應力遷移
- 金屬間介電層擊穿
