Long-wavelength Infrared Semiconductor Lasers (Hardcover)
Hong K. Choi
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The first comprehensive treatment of long-wavelength laser technology
Because of very strong molecular absorption between 2 mm to 1000 mm, compact semiconductor lasers in this spectral range are ideal components for a wide variety of applications ranging from ultra-sensitive detection of molecules, to the study of fine structures of molecules, to studies of the origin of the universe. However, because of the very rapid progress made in these long-wavelength semiconductor lasers in recent years, no comprehensive information covering the entire field has been available up to this point.
Long-Wavelength Infrared Semiconductor Lasers fills the need for a reference that covers the vast scope of coherent semiconductor sources that emit in this important spectral region. Written by today’s foremost experts in the field, the book covers the latest knowledge in the areas of:
- Quantum cascade lasers
- Interband mid-infrared lasers fabricated from InGaAs,antimonides, and lead-salt materials
- Hot-hole lasers
Researchers, application engineers, graduate students, and others who develop mid- to far-infrared emitters and use them for spectroscopy, astrophysics, environmental monitoring, and process control will find Long-Wavelength Infrared Semiconductor Lasers a necessary resource.
Table of Contents:
1. Coherent Sources in the Long-Wavelength Infrared Spectrum (Hong K. Choi).
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-µm Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells (Manabu Mitsuhara and Mamoru Oishi).
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs Quantum Wells.
2.5 Lasing Characteristics of 2-µm wavelength InGaAs-MQW Lasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2µm < λ < 3µm Range.
3.4 Antimonide Lasers Emitting in the λ ≥ 3µm Range.
3.5 Challenges and Issues.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe Peter Schieál, et al.).
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
5. InP and GaAs-Based Quantum Cascade Lasers (Jérôme Faist and Carco Sirtori).
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-Region Device.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-Well Active Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers (Erik Bründermann).
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.5 Laser Emission.
6.6 Future Trends.
7. Continous THz generation with Optical Heterodyning (J. C. Pearson, et al.).
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.