Long-wavelength Infrared Semiconductor Lasers (Hardcover)

Hong K. Choi

  • 出版商: Wiley
  • 出版日期: 2004-03-18
  • 售價: $1,150
  • 貴賓價: 9.8$1,127
  • 語言: 英文
  • 頁數: 395
  • 裝訂: Hardcover
  • ISBN: 0471392006
  • ISBN-13: 9780471392002
  • 相關分類: 半導體
  • 下單後立即進貨 (約5~7天)

買這商品的人也買了...

商品描述

Description:

The first comprehensive treatment of long-wavelength laser technology

Because of very strong molecular absorption between 2 mm to 1000 mm, compact semiconductor lasers in this spectral range are ideal components for a wide variety of applications ranging from ultra-sensitive detection of molecules, to the study of fine structures of molecules, to studies of the origin of the universe. However, because of the very rapid progress made in these long-wavelength semiconductor lasers in recent years, no comprehensive information covering the entire field has been available up to this point.

Long-Wavelength Infrared Semiconductor Lasers fills the need for a reference that covers the vast scope of coherent semiconductor sources that emit in this important spectral region. Written by today’s foremost experts in the field, the book covers the latest knowledge in the areas of:

  • Quantum cascade lasers
  • Interband mid-infrared lasers fabricated from InGaAs,antimonides, and lead-salt materials
  • Hot-hole lasers
  • Photomixers

Researchers, application engineers, graduate students, and others who develop mid- to far-infrared emitters and use them for spectroscopy, astrophysics, environmental monitoring, and process control will find Long-Wavelength Infrared Semiconductor Lasers a necessary resource.

 

 

Table of Contents:

Preface.

Acknowledgments.

Contributors.

1. Coherent Sources in the Long-Wavelength Infrared Spectrum (Hong K. Choi).

1.1 Introduction.

1.2 Synopsis of Long-Wavelength Coherent Sources.

1.3 Scope of Book.

2. 2-µm Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells (Manabu Mitsuhara and Mamoru Oishi).

2.1 Introduction.

2.2 Material Properties of InGaAsP.

2.3 Design Consideration of MQW Active Region.

2.4 Growth and Characterization of Strained-InGaAs Quantum Wells.

2.5 Lasing Characteristics of 2-µm wavelength InGaAs-MQW Lasers.

2.6 Conclusions and Future Prospects.

3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).

3.1 Introduction.

3.2 Antimonide III-V Material System.

3.3 Antimonide Lasers Emitting in the 2µm < λ < 3µm Range.

3.4 Antimonide Lasers Emitting in the λ ≥ 3µm Range.

3.5 Challenges and Issues.

3.6 Conclusions.

4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe Peter Schieál, et al.).

4.1 Introduction.

4.2 Homostructure Lasers.

4.3 Double-Heterostructure Lasers.

4.4 Quantum-Well Lasers.

4.5 DFB and DBR Lasers.

4.6 IV-VI Epitaxy on BaF2 and Silicon.

4.7 Conclusion.

5. InP and GaAs-Based Quantum Cascade Lasers (Jérôme Faist and Carco Sirtori).

5.1 Introduction.

5.2 Quantum Cascade Laser Fundamentals.

5.3 Fundamentals of the Three-Quantum-Well Active-Region Device.

5.4 Waveguide and Technology.

5.5 High-Power, Room-Temperature Operation of Three-Quantum-Well Active Region Designs.

5.6 GaAs-Based QC Lasers.

5.7 Role of the Conduction-Band Discontinuity.

5.8 Spectral Characteristics of QC Lasers.

5.9 Distributed Feedback Quantum Cascade Lasers.

5.10 Microsctructured QC Lasers.

5.11 Outlook on Active Region Designs and Conclusions.

6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers (Erik Bründermann).

6.1 Introduction.

6.2 Hot-Hole Laser Model.

6.3 Laser Material Fabrication.

6.4 Technology.

6.5 Laser Emission.

6.6 Future Trends.

6.7 Summary.

7. Continous THz generation with Optical Heterodyning (J. C. Pearson, et al.).

7.1 Introduction.

7.2 Requirements for Photomixing Systems.

7.3 Design Trade-offs for Photomixers.

7.4 Antenna Design.

7.5 Applications.

7.6 Summary.

Index.

商品描述(中文翻譯)

描述:

這是第一本全面介紹長波長雷射技術的著作。

由於在2毫米至1000毫米之間存在非常強的分子吸收,這個光譜範圍內的緊湊半導體雷射是各種應用的理想組件,從超靈敏的分子檢測,到對分子的微細結構研究,再到宇宙起源的研究。然而,由於近年來這些長波長半導體雷射取得了非常快速的進展,迄今為止還沒有一個全面的資訊來涵蓋整個領域。

《長波長紅外半導體雷射》填補了這一重要光譜區域中發射相干半導體源的廣泛範圍的參考資料的需求。本書由當今該領域的頂尖專家撰寫,涵蓋了以下領域的最新知識:


  • 量子級聯雷射

  • 由InGaAs、銻化物和鉛鹽材料製造的帶間中紅外雷射

  • 熱孔雷射

  • 光混合器

研究人員、應用工程師、研究生和其他開發中至遠紅外發射器並將其用於光譜學、天體物理學、環境監測和過程控制的人士將會發現《長波長紅外半導體雷射》是一個必要的資源。

目錄:

前言。

致謝。

貢獻者。

1. 長波長紅外光譜中的相干光源(Hong K. Choi)。

1.1 引言。

1.2 長波長相干光源概述。

1.3 本書範圍。

2. 使用InP基應變層量子井的2微米波長雷射(Manabu Mitsuhara和Mamoru Oishi)。

2.1 引言。

2.2 InGaAsP的材料特性。

2.3 MQW活性區的設計考慮。

2.4 應變InGaAs量子井的生長和表徵。

2.5 2微米波長InGaAs-MQW雷射的激光特性。

2.6 結論和未來展望。

3. 銻化物中紅外雷射(L.J. Olafsen等)。

3.1 引言。

3.2 銻化物III-V材料系統。

3.3 發射在2微米 < λ < 3微米範圍內的銻化物雷射。

3.4 發射在λ ≥ 3微米範圍內的銻化物雷射。

3.5 挑戰和問題。

3.6 結論。

4. 基於鉛硫化物的中紅外二極管雷射(Uwe Peter Schießl等)。

4.1 引言。

4.2 同質結構雷射。

4.3 雙異質結構雷射。

4.4 量子井雷射。

4.5 DFB和DBR雷射。

4.6 BaF2和矽上的IV-VI外延。

4.7 結論。

5. 基於InP和GaAs的量子級聯雷射(Jérôme Faist和Carlo Sirtori)。

5.1 引言。

5.2 量子級聯雷射基礎知識。

5.3 三量子井活性區器件的基礎知識。

5.4 波導和技術。

5.5 三量子井活性區設計的高功率室溫操作。

5.6 基於GaAs的QC雷射。

5.7 傳導帶不連續性的作用。