Photoinduced Defects in Semiconductors

David Redfield, Richard H. Bube

  • 出版商: Cambridge University Press
  • 出版日期: 2006-03-09
  • 售價: $750
  • 貴賓價: 9.8$735
  • 語言: 英文
  • 頁數: 232
  • 裝訂: Paperback
  • ISBN: 0521024455
  • ISBN-13: 9780521024457

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Description

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.


• Distinguished authors, both Fellows of the American Physical Society
• First book to deal with this subject
• Multidisciplinary subject, of interest to physicists, electrical engineers and materials scientists

 

Table of Contents

1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.