Advanced Theory of Semiconductor Devices (Hardcover)

Karl Hess

  • 出版商: IEEE
  • 出版日期: 1999-12-27
  • 售價: $1,140
  • 語言: 英文
  • 頁數: 352
  • 裝訂: Hardcover
  • ISBN: 0780334795
  • ISBN-13: 9780780334793
  • 相關分類: 半導體
  • 已絕版
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無標題文件 Semiconductor devices are ubiquitous in today’s world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. ADVANCED THEORY OF SEMICONDUCTOR DEVICES will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.

Contents :
Preface; Acknowledgments; Brief Review of the Relevant Equations of Physics; The Symmetry of the Crystal Lattice; The Theory of Energy Bands in Crystals; Imperfections of Ideal Crystal Structure; Equilibrium Statistics for Electrons and Holes; Self-Consistent Potentials and Dielectric Properties of Semiconductors; Scattering Theory; the Boltzmann Transport Equation and its Approximate Solutions; Generation-Recombination; The Heterojunction Barrier and Related transport Problems; The Device Equations of Shockley and Stratton; Numerical Device Simulations; Diodes; Laser-Diodes; Transistors; Appendix A: Tunneling and the Golden Rule; Appendix B: The One Band Approximation; Appendix C: Temperature Dependence of the Band Structure; Appendix D: Hall Effect and Magnetoresistance for Small Magnetic Fields; Appendix E: The Power Balance Equation from the Method of Moments; Appendix F: the Self-Consistent Potential at a Heterojunction (Quantum Case); Appendix G: Diffusive Transport and Thermionic Emission in Schottky Barrier Transport; Index; About the Author