Advanced MOS Devices and their Circuit Applications
暫譯: 先進MOS元件及其電路應用

這段文字全面討論了先進的MOS裝置及其在可靠性方面的電路應用。此外，將探討一個基於隧道場效應晶體管（Tunnel FET）的能效電路應用，並從輸出電壓、功率效率、能量消耗和性能等方面進行研究，採用裝置電路共同設計的方法。

Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Modeling Group, IISER, Bhopal, and then as a research scientist for one year under awarded Scientist Pool scheme of Council of Scientific and Industrial Research (CSIR), New Delhi. Currently, he is working as an assistant professor at Vellore Institute of Technology (VIT) Bhopal. He is an IEEE Senior Member and a Secretary of IEEE, Circuit and System Society, MP section, India. He completed his M.Tech degree in VLSI and Embedded System Design from MANIT Bhopal and B.Tech (Electronics) from RGPV University Bhopal in 2010 and 2005. He has a research and academic work experience of more than 13 years. He has a renowned research experience in the field of low-power device circuit design Memory Circuit Design and Reliability. His current research is related to new-generation innovative devices, such as optimization of gate all around (GAA)-Tunnel field effect transistor (TFET) with spacer engineering and its circuit applications. Currently, he is working in the research project sanctioned by the Science and Engineering Research Board (SERB) under the Teachers Associateship Research Excellence (TARE) scheme. Dr. Beohar has published more than 35 research publications in various peer- reviewed international conferences and SCI journals. Along with this, he has reviewed more than 100+ journal and conferences articles.

Dr. Abhishek Kumar Upadhyay obtained a PhD in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2019. After getting his PhD, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and then as a staff scientist in the Chair of Electronics Devices and Integrated Circuits at Technische Universität Dresden, Germany, for two years. Currently he is working as an R&D rngineer in X-FAB GmbH, Dresden, Germany. He is the author of several research articles.

Dr. Ribu Mathew holds a doctorate degree in electronics engineering from Vellore Institute of Technology (VIT) University, Chennai Campus. A gold medallist in his post graduation, Dr. Mathew completed his MTech in VLSI design and BTech in electronics and communication engineering. In his doctoral research work, he has contributed in the field of design, modelling, and fabrication of NEMS technology piezoresistive readout-based nano cantilever sensors for chemical and biological sensing applications. In addition to the compu- tational knowledge in industrial standard NEMS devices, he has gained experience in NEMS/IC layout tools and clean room fabrication technologies from CeNSE, IISc Bangalore. He has published several research papers in reputed international journals and conferences. His research areas include the design, modelling, and fabrication of MEMS/NEMS technology- based sensor and actuator systems, especially micro/nano cantilever and diaphragm-based devices, bio-MEMS, analog/RF IC design, SoC design, and device modeling. Currently he is working as an Associate Professor, MAHE, MANIPAL University, Karnataka.

Professor Santosh Kumar Vishvakarma received the BSc in electronics from the University of Gorakhpur, Gorakhpur, in 1999, the MSc in electronics from Devi Ahilya Vishwavidyalaya, Indore, India, in 2001, the MTech in microelectronics from Punjab University, Chandigarh, India, in 2003, and the PhD in microelectronics and VLSI from the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, India, in 2010. From 2009 to 2010, he was with University Graduate Center, Kjeller, Norway, as a postdoctoral fellow under European Union COMON project. Professor Vishvakarma is with the Department of Electrical Engineering, Indian Institute of Technology Indore, MP, India as a professor at IIT Indore. He is leading the Nanoscale Devices and VLSI Circuit and System Design (NSDCS) Laboratory since 2010. He is engaged with teaching and research in the areas of:

• Energy-efficient and reliable SRAM memory design
• Enhancing performance and configurable architecture for DNN accelerators
• SRAM based in-memory computing architecture for edge AI
• Reliable, secure design for IoT applications
• Design for reliability

He has supervised a total of seventeen PhD students, and currently six students are working with his group. He has authored or co-authored more than 175 research papers in peer-reviewed international journals and conferences. He was also granted 04 Indian Patent from IIT Indore and has thirteen sponsored research projects. He is a senior member of IEEE, professional member of VLSI Society of India, associate member of Institute of Nanotechnology, and life member of Indian Microelectronics Society (IMS), India.

安庫爾·比奧哈博士（IEEE 高級會員）於2018年在印度中央理工學院（IIT）印度中央理工學院（IIT），印多爾，印度獲得電機工程博士學位。獲得博士學位後，他在博帕爾的印度科學教育與研究所（IISER）設備建模組擔任博士後研究員，隨後在新德里的科學與工業研究委員會（CSIR）獲得的科學家池計畫下擔任研究科學家一年。目前，他在博帕爾的維洛爾科技學院（VIT）擔任助理教授。他是IEEE高級會員及印度MP區域IEEE電路與系統學會的秘書。他於2010年和2005年分別在博帕爾的MANIT獲得VLSI及嵌入式系統設計碩士學位，以及在RGPV大學獲得電子學學士學位。他擁有超過13年的研究和學術工作經驗，在低功耗設備電路設計、記憶體電路設計及可靠性方面具有卓越的研究經驗。他目前的研究與新一代創新設備有關，例如優化環繞閘（GAA）隧道場效應晶體管（TFET）及其電路應用，並進行間隔工程。目前，他正在進行由科學與工程研究委員會（SERB）批准的教師助理研究卓越（TARE）計畫的研究。比奧哈博士已在各種同行評審的國際會議和SCI期刊上發表超過35篇研究論文。此外，他還審閱了超過100篇期刊和會議文章。

阿比謝克·庫馬爾·烏帕迪亞博士於2019年在印度中央理工學院（IIT）印多爾獲得電機工程博士學位。獲得博士學位後，他在法國波爾多大學的材料到系統整合實驗室模型組擔任博士後研究員一年，隨後在德國德累斯頓工業大學電子設備與集成電路系擔任員工科學家兩年。目前，他在德國德累斯頓的X-FAB GmbH擔任研發工程師。他是多篇研究文章的作者。

里布·馬修博士擁有來自維洛爾科技大學（VIT）喀拉拉校區的電子工程博士學位。作為研究生的金牌得主，馬修博士完成了VLSI設計的碩士學位和電子與通信工程的學士學位。在他的博士研究中，他在設計、建模和製造NEMS技術壓電讀出基礎的納米懸臂梁傳感器方面做出了貢獻，應用於化學和生物傳感。除了在工業標準NEMS設備的計算知識外，他還從班加羅爾的印度科學研究所（IISc）CeNSE獲得了NEMS/IC佈局工具和潔淨室製造技術的經驗。他在知名國際期刊和會議上發表了多篇研究論文。他的研究領域包括基於MEMS/NEMS技術的傳感器和執行器系統的設計、建模和製造，特別是微型/納米懸臂梁和隔膜基設備、生物MEMS、類比/RF IC設計、SoC設計和設備建模。目前，他在卡納塔克邦的馬尼帕爾大學（MAHE）擔任副教授。

桑托什·庫馬爾·維什瓦卡爾瑪教授於1999年在戈拉克布爾大學獲得電子學學士學位，2001年在德維·阿希利亞大學獲得電子學碩士學位，2003年在旁遮普大學獲得微電子學碩士學位，2010年在印度中央理工學院魯爾基分校的電子與通信工程系獲得微電子學和VLSI博士學位。2009年至2010年，他在挪威基耶勒的國立大學研究中心擔任博士後研究員，參與歐盟COMON計畫。維什瓦卡爾瑪教授目前在印度中央理工學院印多爾的電機工程系擔任教授，自2010年以來領導納米級設備和VLSI電路與系統設計（NSDCS）實驗室。他的教學和研究領域包括：

• 節能且可靠的SRAM記憶體設計


• 增強DNN加速器的性能和可配置架構


• 基於SRAM的邊緣AI內存計算架構


• 物聯網應用的可靠、安全設計


• 可靠性設計

他已指導了17名博士生，目前有6名學生在他的團隊中工作。他在同行評審的國際期刊和會議上發表或共同發表了超過175篇研究論文。他還獲得了4項印度專利，並擁有13個贊助研究項目。他是IEEE的高級會員、印度VLSI學會的專業會員、納米技術學會的副會員，以及印度微電子學會（IMS）的終身會員。