Beyond Complementary Metal-Oxide-Semiconductor Nanoelectronics: Diversified Approaches to Transcending Physical Scaling Limits
暫譯: 超越 Complementary Metal-Oxide-Semiconductor 奈米電子學：突破物理微縮極限的多元途徑
Khanna, Vinod Kumar
商品描述
Complementary Metal-Oxide-Semiconductor (CMOS) nanoelectronics are approaching their physical limits, leading to issues such as excessive leakage and increased power consumption. New materials, computing methods, and state variables are being investigated to solve these issues. These emerging technologies embrace a wide range of cutting-edge developments aimed at surpassing the physical constraints of traditional CMOS devices. This research is vital for enabling future computing abilities, particularly in devices that could serve new functions in fields such as artificial intelligence and quantum information processing.
Providing an engaging and clear perspective on the future of nanoelectronics, this book will be a valuable reference for graduate students specializing in electrical engineering, computer engineering, materials science, and physics, as well as for university instructors delivering advanced coursework on nanoelectronics, VLSI design, and solid-state devices. Professional engineers and designers in the semiconductor field who wish to stay up to date on new technologies, as well as investigators in nanoelectronics and semiconductor technology, will also find it useful.
Key features:
- Explains why conventional CMOS scaling is reaching its physical and technological limits and outlines new approaches necessary to improve performance.
- Highlights the importance of moving beyond electric-charge-based computing to explore alternative properties such as electron spin, for information storage and processing.
- Bridges the gap between devices and systems by integrating the core physics and materials science of devices with high-level architectural design and advanced packaging techniques.
This book offers an in-depth examination of the challenges associated with conventional CMOS technology, outlining the obstacles and issues encountered with traditional CMOS scaling, including power and energy consumption, as well as variability, and highlighting the necessity for alternative technologies. It presents possible successor technologies to CMOS, including emerging logic devices, memory chips, compute-in-memory architectures, new materials, and integration methods. These technologies leverage alternative physical effects, including spintronics, neuromorphic computing, and quantum phenomena, and introduce novel functionalities to enhance performance.
商品描述(中文翻譯)
互補式金屬氧化物半導體（Complementary Metal-Oxide-Semiconductor, CMOS）奈米電子技術正逐漸接近其物理極限，因而導致過度漏電與功耗增加等問題。為了解決這些問題，研究人員正探討新材料、計算方法與狀態變數。這些新興技術涵蓋廣泛的尖端發展，旨在突破傳統 CMOS 元件的物理限制。這項研究對於實現未來的計算能力至關重要，尤其是可在人工智慧與量子資訊處理等領域發揮新功能的裝置。
本書以引人入勝且清晰易懂的方式，介紹奈米電子技術的未來，將成為電機工程、電腦工程、材料科學與物理學研究生的重要參考資料；同時也適合大學教師用於奈米電子學、超大型積體電路（VLSI）設計及固態元件等進階課程。半導體領域中希望掌握最新技術的專業工程師與設計人員，以及從事奈米電子學與半導體技術研究的學者，也能從本書獲益。
主要特色：
• 說明傳統 CMOS 微縮技術（scaling）為何正逐漸接近其物理與技術極限，並概述提升效能所需的新方法。
• 強調有必要超越以電荷為基礎的計算方式，探索電子自旋（electron spin）等替代性質，以進行資訊儲存與處理。
• 彌合元件與系統之間的落差，將元件的核心物理與材料科學，和高階架構設計及先進封裝技術整合起來。
本書深入檢視傳統 CMOS 技術所面臨的挑戰，說明傳統 CMOS 微縮過程中遭遇的障礙與問題，包括功率與能量消耗，以及變異性（variability），並強調採用替代技術的必要性。本書介紹可能取代 CMOS 的後繼技術，包括新興邏輯元件、記憶體晶片、記憶體內運算（compute-in-memory）架構、新型材料與整合方法。這些技術運用自旋電子學（spintronics）、類神經運算（neuromorphic computing）及量子現象等替代性物理效應，並引入創新功能以提升效能。
作者簡介
Vinod Kumar Khanna, Ph. D (Physics), is an independent researcher from Chandigarh, India. He is a retired Chief Scientist from the Council of Scientific and Industrial Research (CSIR)--Central Electronics Engineering Research Institute (CEERI), Pilani, India, and a retired Professor from the Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, India. He is a former Emeritus Scientist at CSIR and a Professor Emeritus at AcSIR, India. His broad research areas include the design, fabrication, and characterization of power semiconductor devices and micro- and nanosensors. He has published 194 research papers in leading peer-reviewed journals and conference proceedings. He has authored 25 books and contributed six chapters to edited books. He has five granted patents to his credit, including two US patents. He is featured in the Stanford-Elsevier prestigious list of the world's top 2% scientists (2022, Elsevier Data Repository, V4, doi:10.17632/btchxktzyw.4). He is named as a Highly ranked Scholar -Lifetime: #2 in Nanoelectronics by ScholarGPS.
作者簡介(中文翻譯)
Vinod Kumar Khanna 博士（物理學）是來自印度 Chandigarh 的獨立研究人員。他曾任印度 Pilani 的 Council of Scientific and Industrial Research (CSIR)—Central Electronics Engineering Research Institute (CEERI) 首席科學家，並曾任印度 Ghaziabad 的 Academy of Scientific and Innovative Research (AcSIR) 教授。他曾擔任 CSIR 榮譽科學家，以及印度 AcSIR 榮譽教授。
他的研究領域廣泛，涵蓋功率半導體元件以及微型與奈米感測器的設計、製造與特性分析。他已在重要的同儕審查期刊及研討會論文集中發表 194 篇研究論文，著有 25 本書，並為編輯書籍撰寫六個章節。他共獲得五項核准專利，其中包括兩項美國專利。
他入選 Stanford-Elsevier 頗具聲望的全球前 2% 科學家名單（2022 年，Elsevier Data Repository，V4，doi:10.17632/btchxktzyw.4）。ScholarGPS 將他列為終身排名第 2 的奈米電子學（Nanoelectronics）高排名學者。
