Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to LSI (Wiley Series in Display Technology)

Shunpei Yamazaki (Editor), Masahiro Fujita (Editor)

  • 出版商: Wiley
  • 出版日期: 2016-12-27
  • 售價: $3,920
  • 貴賓價: 9.5$3,724
  • 語言: 英文
  • 頁數: 376
  • 裝訂: Hardcover
  • ISBN: 1119247349
  • ISBN-13: 9781119247340
  • 相關分類: 半導體物理學 Physics

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This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays.

Key features:

• Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices.
• Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention.
• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.