Integrated Power Devices and TCAD Simulation (Paperback)
Fu, Yue, Li, Zhanming, Ng, Wai Tung
- 出版商: CRC
- 出版日期: 2017-03-29
- 售價: $3,510
- 貴賓價: 9.5 折 $3,335
- 語言: 英文
- 頁數: 364
- 裝訂: Quality Paper - also called trade paper
- ISBN: 1138071854
- ISBN-13: 9781138071858
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相關分類:
電力電子 Power-electronics、電子商務 E-commerce、電子學 Eletronics
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其他版本:
Integrated Power Devices and TCAD Simulation (Hardcover)
海外代購書籍(需單獨結帳)
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商品描述
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.
Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
商品描述(中文翻譯)
從功率電子學到功率集成電路(PICs),智能功率技術、器件等等,《集成功率器件和TCAD模擬》提供了對於功率管理和半導體行業的全面了解。這本書是功率器件工程學生和專業人士的重要參考資料,不僅描述了集成功率半導體器件(如側向雙擴散金屬氧化物半導體場效應晶體管(LDMOSFETs)、側向絕緣閘極雙極晶體管(LIGBTs)和超級結LDMOSFETs)內部的物理原理,還簡單介紹了功率管理系統。
本書不僅避免了抽象的理論論述和令人生畏的方程式,還使用技術計算機輔助設計(TCAD)模擬實例來解釋集成功率半導體器件的設計。它還探討了鎵氮功率高電子遷移率晶體管(GaN功率HEMTs)等下一代功率器件。
《集成功率器件和TCAD模擬》還包括了智能PIC技術的虛擬流程以及難以找到的技術發展組織結構圖,為學生和初級工程師在功率半導體器件領域提供了一個良好的起點,同時有助於填補功率器件工程和功率管理系統之間的差距。
作者簡介
Yue Fu obtained his Ph.D from the University of Central Florida, Orlando, USA and his BS from Zhejiang University, China. He is currently the vice president of Crosslight Software, Inc., Vancouver, British Columbia, Canada. Dr. Fu is a senior member of IEEE and has more than ten years of industry and academic experience in power semiconductor devices and power electronics. He holds multiple US patents and has authored or co-authored numerous peer-reviewed papers.
Zhanming (Simon) Li obtained his Ph.D from the University of British Columbia, Vancouver, Canada in 1988. He was with the National Research Council of Canada (NRCC) from 1988 to 1995, where he developed semiconductor device simulation software. In 1995, he founded Crosslight Software, Inc., Vancouver, British Columbia, Canada with simulation technology transferred from the NRCC. Since then, Dr. Li has been the chief designer of many semiconductor process and device simulation software packages. He has been actively involved in research of TCAD simulation technology and authored or coauthored over 70 research papers.
Wai Tung Ng received his BAS, MAS, and Ph.D in electrical engineering from the University of Toronto, Ontario, Canada in 1983, 1985, and 1990, respectively. He was a member of technical staff at Texas Instruments, Dallas, USA from 1990 to 1991. He started his academic career at the University of Hong Kong in 1992. Dr. Ng returned to the University of Toronto as a faculty member in 1993 and is currently a full professor. His research is focused on the areas of power management integrated circuits, integrated DC-DC converters, smart power integrated circuits, power semiconductor devices, and fabrication processes.
Johnny Kin-On Sin obtained his BAS, MAS, and Ph.D in electrical engineering from the University of Toronto, Ontario, Canada in 1981, 1983, and 1988, respectively. He was a senior member of the research staff of Philips Research North America, Briarcliff Manor, New York, USA from 1988 to 1991. He joined the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology in 1991 and is currently a full professor. An IEEE fellow, Dr. Sin is the holder of 13 patents and author of over 280 technical papers. His research interests include novel power semiconductor devices and power system-on-chip technologies.
作者簡介(中文翻譯)
岳甫(Yue Fu)在美國佛羅里達中央大學獲得博士學位,並在中國浙江大學獲得學士學位。他目前是加拿大不列顛哥倫比亞省溫哥華Crosslight Software公司的副總裁。岳博士是IEEE的高級會員,擁有超過十年的功率半導體器件和功率電子學的行業和學術經驗。他擁有多項美國專利,並撰寫或合著了許多同行評審的論文。
李占明(Simon Li)於1988年在加拿大溫哥華的英屬哥倫比亞大學獲得博士學位。他在加拿大國家研究委員會(NRCC)工作了七年,期間開發了半導體器件模擬軟件。1995年,他與NRCC轉移了模擬技術,創立了加拿大不列顛哥倫比亞省溫哥華的Crosslight Software公司。自那時以來,李博士一直是許多半導體工藝和器件模擬軟件包的首席設計師。他積極參與TCAD模擬技術的研究,並撰寫或合著了70多篇研究論文。
吳偉東(Wai Tung Ng)於1983年、1985年和1990年分別在加拿大安大略省多倫多大學獲得電氣工程學士、碩士和博士學位。他在1990年至1991年間擔任德州儀器公司的技術人員。他於1992年開始在香港大學從事學術工作。吳博士於1993年回到多倫多大學擔任教職,目前是一位正教授。他的研究專注於功率管理集成電路、集成DC-DC轉換器、智能功率集成電路、功率半導體器件和製程製造等領域。
冼建安(Johnny Kin-On Sin)於1981年、1983年和1988年分別在加拿大安大略省多倫多大學獲得電氣工程學士、碩士和博士學位。他在1988年至1991年期間擔任飛利浦北美研究部的高級研究員。他於1991年加入香港科技大學電子與計算機工程系,目前是一位正教授。冼博士是IEEE的院士,擁有13項專利和超過280篇技術論文的作者。他的研究興趣包括新型功率半導體器件和功率系統芯片技術。