Dynamic RAM: Technology Advancements

Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components--access transistor, storage capacitor, and peripherals--DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.

Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

• DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
• Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
• How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
• Various types of leakages and power consumption reduction methods in active and sleep mode
• Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

由於DRAM在大型機、個人電腦和移動音視頻設備中的廣泛使用，DRAM的生產量不斷增加，無論是作為獨立產品還是作為系統芯片的一部分嵌入式形式。由於其組件（存取晶體管、存儲電容器和外圍設備）的最佳設計，DRAM是目前最便宜和最密集的半導體記憶體。因此，大部分DRAM結構的研究和開發都集中在其組成組件及其互連技術上。然而，關於半導體記憶體的書籍很少，關於DRAM的書籍更是少之又少。

《動態隨機存取記憶體：技術進展》提供了DRAM技術的整體觀點，系統性地描述了自1970年代以來該領域的進展，並分析了未來的挑戰。

主題包括：
- 各種類型的DRAM單元，包括平面、三維（3-D）溝槽或堆疊、COB或CUB、垂直和機械強韌單元，使用先進的晶體管和存儲電容器。
- RCAT、SCAT、FinFET、BT FinFET、Saddle和先進凹槽類型的晶體管技術的進展，以及存儲電容器的實現。
- 亞100納米溝槽DRAM技術和亞50納米堆疊DRAM技術及相關主題可能導致的新研究。
- 活動模式和睡眠模式下各種類型的漏電和功耗降低方法。
- 使用ECC和冗余的各種類型的SA和提高產量的技術。

對於半導體記憶體研究的有價值的補充，對於設計和優化高密度和成本效益的DRAM感興趣的學者和研究人員也可能會發現它作為研究生課程的一部分有用。