The Fet Centennial: Celebrating the Field-Effect Transistor
暫譯: FET 百年：慶祝場效電晶體
Yang, Cary Y., Claeys, Cor, Nathan, Arokia
- 出版商: Wiley
- 出版日期: 2026-10-19
- 售價: $3,700
- 貴賓價: 9.5 折 $3,515
- 語言: 英文
- 頁數: 976
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1394406487
- ISBN-13: 9781394406487
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相關分類:
半導體、微電子學 Microelectronics、VLSI
尚未上市，無法訂購
商品描述
Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications
The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. The FET Centennial: Celebrating the Field-Effect Transistor commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the device's history, global development, diverse applications, and potential future directions.
This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFET's rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after.
A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistor's enduring importance and likely trajectory in the decades ahead, The FET Centennial:
- Addresses both historical milestones and technological disruptions shaping current and future electronics
- Examines international research and development with narratives from the United States, Europe, and Asia
- Covers device structures from MOSFETs to III-V and 2D-material-based FETs
- Includes forward-looking analyses of nanoscale transport, 3D architectures, and GAAFET innovations
- Features detailed coverage of process integration, interconnects, lithography, and compact modeling
Authored by globally recognized experts with leadership roles in academia, industry, and professional societies, The FET Centennial: Celebrating the Field-Effect Transistor is essential reading for graduate and senior undergraduate students in electrical engineering, materials science, and applied physics courses such as Semiconductor Devices, Integrated Circuit Technology, and Microelectronics. It is also an indispensable reference for researchers, practicing engineers, and historians of science and technology.
商品描述(中文翻譯)
出版這部里程碑式著作，記錄場效電晶體（field-effect transistor, FET）100 年來的創新與應用
場效電晶體（FET）於 1925 年問世，改變了現代文明的發展軌跡，促成今日幾乎所有電子裝置的實現。從早期的積體電路，到最先進的電腦與智慧型手機，FET 一直是當代資訊科技不可或缺的基礎。《The FET Centennial: Celebrating the Field-Effect Transistor》邀集傑出的專家學者，共同全面回顧 FET 的歷史、全球發展、多元應用，以及未來可能的發展方向，以紀念這項重要里程碑。
本書首先深入探討 FET 技術的歷史與演進，包括 MOSFET 的崛起，以及美國、歐洲與亞洲各地的國際發展。接著，本書聚焦於關鍵應用與整合製程，涵蓋從記憶體與邏輯元件，到 CMOS 影像感測器、類比／RF CMOS，以及新興的薄膜電晶體與寬能隙電晶體。最後，本書探討 3D 與全環繞閘極（gate-all-around, GAA）FET、奈米尺度傳輸現象，以及新型二維（2D）材料的導入等最先進發展，同時思考 FET 下一步的可能方向，以及未來是否會出現取代 FET 的新技術。
《The FET Centennial: Celebrating the Field-Effect Transistor》不僅記錄一世紀以來的成就，也將場效電晶體持續的重要性，以及其在未來數十年可能的發展軌跡置於更完整的脈絡中。本書：
• 探討塑造當前與未來電子技術的歷史里程碑與技術變革
• 透過來自美國、歐洲與亞洲的敘述，檢視全球研究與開發成果
• 涵蓋從 MOSFET，到 III-V 族與以二維材料為基礎的 FET 等各種元件結構
• 前瞻性分析奈米尺度傳輸、3D 架構與 GAAFET 創新技術
• 詳細介紹製程整合、互連、微影技術與緊湊模型（compact modeling）
《The FET Centennial: Celebrating the Field-Effect Transistor》由學術界、產業界與專業學會中擔任領導職務的全球知名專家共同撰寫，是電機工程、材料科學與應用物理領域研究所及高年級大學生修習半導體元件、積體電路技術與微電子學等課程時不可或缺的讀物。本書也是研究人員、實務工程師，以及科學與技術史學者不可或缺的參考資料。
作者簡介
CARY Y. YANG, PHD, is a Professor of Electrical and Computer Engineering at Santa Clara University. An IEEE Life Fellow, he has served as Editor of IEEE Transactions on Electron Devices, President of the IEEE Electron Devices Society, and as a Member of the IEEE Board of Directors. His research spans silicon-based nanoelectronics, nanocarbon interconnects, and nanostructure interfaces.
COR CLAEYS, PHD, is a Professor at KU Leuven, Belgium, and teaches internationally in Europe, China, India, and Brazil. A Fellow of both the Electrochemical Society and IEEE, he has co-edited books on low-temperature electronics and germanium-based technologies, authored four monographs, and contributed more than 1,400 technical papers and 16 book chapters.
AROKIA NATHAN, PHD, is a Bye-Fellow and Tutor at Darwin College, University of Cambridge. With over 600 publications, six books, more than 150 patents, and four spin-off companies, he is a Fellow of the IEEE, IET (UK), Royal Academy of Engineering, Canadian Academy of Engineering, and the Society for Information Displays, and a Foreign Member of the Chinese Academy of Sciences. His research has advanced thin-film electronics and sensor technologies.
BIN ZHAO, PHD, has been with SEMATECH, Rockwell, Conexant, Skyworks, Freescale, Fairchild, and OnSemi in advanced IC technology and product development. An IEEE Fellow, he holds more than 150 patents and has served as Founding Co-Chair of the RF/AMS Working Group for the International Technology Roadmap for Semiconductors, IEEE Conferences Committee Chair, and President of the IEEE Electron Devices Society.
作者簡介(中文翻譯)
CARY Y. YANG 博士是 Santa Clara University 電機與電腦工程學教授。他是 IEEE 終身會士，曾擔任 IEEE Transactions on Electron Devices 編輯、IEEE Electron Devices Society 主席，以及 IEEE 董事會成員。他的研究涵蓋矽基奈米電子學、奈米碳互連，以及奈米結構介面。
COR CLAEYS 博士是比利時 KU Leuven 教授，並在歐洲、中國、印度及巴西從事國際教學。他同時是 Electrochemical Society 與 IEEE 會士，曾共同編輯低溫電子學與鍺基技術相關書籍，著有四本專著，並發表超過 1,400 篇技術論文及 16 篇書籍章節。
AROKIA NATHAN 博士是 University of Cambridge Darwin College 的 Bye-Fellow 與 Tutor。他發表超過 600 篇論文、出版六本書、持有超過 150 項專利，並創立四家衍生公司。他是 IEEE、IET（英國）、Royal Academy of Engineering、Canadian Academy of Engineering 及 Society for Information Displays 會士，並為 Chinese Academy of Sciences 外籍院士。他的研究推動了薄膜電子學與感測器技術的發展。
BIN ZHAO 博士曾任職於 SEMATECH、Rockwell、Conexant、Skyworks、Freescale、Fairchild 及 OnSemi，從事先進 IC 技術與產品開發。他是 IEEE 會士，持有超過 150 項專利，並曾擔任 International Technology Roadmap for Semiconductors RF/AMS Working Group 創始共同主席、IEEE Conferences Committee 主席，以及 IEEE Electron Devices Society 主席。
