Nitride Wide Bandgap Semiconductor Material and Electronic Devices
暫譯: 氮化物寬帶隙半導體材料與電子裝置
Hao, Yue, Zhang, Jin Feng, Zhang, Jin Cheng
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商品描述
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
商品描述(中文翻譯)
本書系統性地介紹了 III-氮化物寬帶隙半導體材料及其電子設備的物理特性和實現方式，特別強調高電子遷移率晶體管（HEMTs）。氮化物半導體的特性使得這種材料非常適合用於微波功率放大、高壓開關和高速數位集成電路的電子設備。
作者簡介
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
作者簡介(中文翻譯)
岳浩、金峰張和金城扎均隸屬於中國西電大學。
