Silicon Non-Volatile Memories: Paths of Innovation (Hardcover)

This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different “evolutionary paths” based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. “Disruptive paths” are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

本書提供了對目前正在研究以滿足未來記憶需求的不同技術方法的全面概述。書中確定並討論了兩個主要的研究方向。基於新材料和新晶體管結構的不同“演化路徑”被研究，以將傳統的浮閘技術擴展到32納米節點。同時也涵蓋了“顛覆性路徑”，探討了22納米及更小的集成電路世代。最後，本書還確定並分析了這些現象的主要因素，提供了未來研究活動和該領域發展的指引。