The Basic Topology: A Revolutionary Power Device Control Strategy
暫譯: 基本拓撲：一種革命性的電力裝置控制策略

Baliga, B. Jayant, Kanale, Ajit

The Basic Topology: A Revolutionary Power Device Control Strategy
  • 出版商: Springer
  • 出版日期: 2025-05-20
  • 售價: $4,780
  • 貴賓價: 9.5 折 $4,541
  • 語言: 英文
  • 頁數: 316
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 3031866290
  • ISBN-13: 9783031866296

    • 海外代購書籍(需單獨結帳)

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商品描述

The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives.

    Introduces the BaSIC topology - a revolutionary new approach for the control of power devices; Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices; Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.

商品描述(中文翻譯)

BaSIC 拓撲是一種革命性的控制功率半導體裝置的方法。它能夠監控通過這些裝置的電流流動，同時提供獨特的電流限制能力，增強其短路耐受能力。本書描述了 BaSIC 拓撲的概念，並將其與以往的方法進行對比。書中詳細介紹了 BaSIC 拓撲在矽 IGBT、碳化矽功率 MOSFET 和 GaN HEMT 裝置上的應用。首次實現了將碳化矽功率 MOSFET 的短路耐受時間延長至超過 10 毫秒的能力。BaSIC 拓撲是唯一能夠消除這些裝置在重複短路事件下失效的方案。展示了在並聯裝置中感測電流的能力，消除了對外部感測器的需求。BaSIC 拓撲在各種功率電子應用中具有實用性，包括電動車和工業馬達驅動。

- 介紹了 BaSIC 拓撲——一種革命性的功率裝置控制新方法；
- 描述了 BaSIC 拓撲在矽 IGBT、碳化矽功率 MOSFET 和 GaN HEMT 裝置上的應用；
- 由絕緣閘雙極型晶體管 (IGBT) 和 BaSIC 拓撲概念的發明者撰寫。

作者簡介

B. Jayant Baliga received his M.S. and Ph.D. in electrical engineering from Rensselaer Polytechnic Institute, Troy, NY, in 1971 and 1974, respectively. He spent 15 years at the General Electric R&D Center, Schenectady, NY, leading their power device effort and was bestowed the highest rank of Coolidge Fellow for inventing, developing and commercializing the IGBT. It is now utilized in all sectors of the economy, including electric vehicles and renewable energy generation. He derived the Baliga's-Figure-of-Merit (BFOM) in 1979 that is widely used for wide band gap semiconductor power devices. He joined North Carolina State University (NCSU) in 1988 as a Full Professor and was promoted to Distinguished University Professor in 1997 and subsequently Progress Energy Distinguished University Professor. He has founded four start-up companies with successful products while at NCSU. Dr. Baliga has authored 28 books and over 750 publications in international journals and conference digests. He is the author of the textbook Fundamentals of Power Semiconductor Devices (Springer, 2018), now in its second edition, and three Springer monographs: Advanced High Voltage Power Device Concepts (2012), Advanced Power MOSFET Concepts (2010), and Advanced Power Rectifier Concepts (2009). President Obama honored him with the National Medal of Technology and Innovation in 2011 at the White House and he is the recipient of the highest IEEE recognition, the Medal of Honor in 2014, the Global Energy Prize in 2015, and the Millennium Technology Prize in 2024. He holds 124 U.S. patents and was inducted into the National Inventors Hall of Fame as the sole inventor of the insulated-gate bipolar transistor (IGBT) in 2016.

Ajit Kanale is a Power Applications Engineer in the Advanced Power Applications Group at Wolfspeed Inc. He graduated with a Bachelor's in Avionics from the Indian Institute of Space Science and Technology, Thiruvananthapuram, India. In 2012, he was posted as a Satellite Engineer in the Indian Space Research Organization's satellite mission control facility in Bangalore, managing remote sensing and scientific satellite missions. In 2016, he moved to Raleigh, NC, to pursue graduate studies at North Carolina State University. He obtained his Master's Degree in Electrical Engineering in 2019, with a thesis on short-circuit characterization of the 1.2 kV Silicon Carbide JBSFET device under the joint guidance of Prof. B. Jayant Baliga and Prof. Subhashish Bhattacharya. From 2018 to 2022, with the same advisors, he pursued doctoral research on the BaSIC topology to improve short-circuit ruggedness of power devices. In addition, he also assisted in characterizing several innovative 650 V and 1.2 kV SiC power MOSFET and JBSFET device designs, including the Split-Gate, Buffered-Gate, Hexagonal-cell MOSFETs, and the BiDirectional FET (BiDFET).

作者簡介(中文翻譯)

B. Jayant Baliga於1971年和1974年分別在美國紐約州特洛伊的倫斯勒理工學院獲得電機工程碩士和博士學位。他在美國通用電氣公司（General Electric）位於紐約州斯克內克塔迪的研發中心工作了15年，負責其電力元件的開發，並因發明、開發和商業化絕緣閘雙極型晶體管（IGBT）而獲得了Coolidge Fellow的最高榮譽。IGBT目前已在經濟的各個領域中得到應用，包括電動車和可再生能源發電。他於1979年提出了Baliga's-Figure-of-Merit（BFOM），該指標廣泛用於寬帶隙半導體電力元件。他於1988年加入北卡羅來納州立大學（NCSU）擔任正教授，並於1997年晉升為傑出大學教授，隨後成為Progress Energy傑出大學教授。在NCSU期間，他創立了四家初創公司，並成功推出了多款產品。Baliga博士已出版28本書籍和超過750篇國際期刊及會議文獻。他是教科書《電力半導體元件基礎》（Fundamentals of Power Semiconductor Devices，Springer，2018）的作者，該書目前已進入第二版，並且還有三本Springer專著：《先進高壓電力元件概念》（Advanced High Voltage Power Device Concepts，2012）、《先進電力MOSFET概念》（Advanced Power MOSFET Concepts，2010）和《先進電力整流器概念》（Advanced Power Rectifier Concepts，2009）。奧巴馬總統於2011年在白宮頒發國家技術與創新獎給他，並且他於2014年獲得IEEE最高榮譽獎——榮譽獎章，2015年獲得全球能源獎，2024年獲得千禧年技術獎。他擁有124項美國專利，並於2016年作為絕緣閘雙極型晶體管（IGBT）的唯一發明人入選全國發明家名人堂。

Ajit Kanale是Wolfspeed Inc.先進電力應用小組的電力應用工程師。他畢業於印度特里凡得琅的印度太空科學與技術學院，獲得航空電子學學士學位。2012年，他被派往印度空間研究組織的衛星任務控制設施擔任衛星工程師，負責管理遙感和科學衛星任務。2016年，他搬到北卡羅來納州的羅利，繼續在北卡羅來納州立大學攻讀研究生學位。他於2019年獲得電機工程碩士學位，論文主題為1.2 kV碳化矽JBSFET元件的短路特性，指導教授為B. Jayant Baliga教授和Subhashish Bhattacharya教授。從2018年到2022年，在同樣的指導教授下，他進行了有關BaSIC拓撲的博士研究，以提高電力元件的短路韌性。此外，他還協助表徵了幾種創新的650 V和1.2 kV SiC電力MOSFET和JBSFET元件設計，包括Split-Gate、Buffered-Gate、六邊形單元MOSFET和雙向場效應晶體管（BiDFET）。

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