Multi-run Memory Tests for Pattern Sensitive Faults
Ireneusz Mrozek
- 出版商: Springer
- 出版日期: 2018-07-18
- 售價: $2,360
- 貴賓價: 9.5 折 $2,242
- 語言: 英文
- 頁數: 135
- 裝訂: Hardcover
- ISBN: 3319912038
- ISBN-13: 9783319912035
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商品描述
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.