Multi-run Memory Tests for Pattern Sensitive Faults

Ireneusz Mrozek

  • 出版商: Springer
  • 出版日期: 2018-07-07
  • 售價: $4,339
  • 貴賓價: 9.5$4,122
  • 語言: 英文
  • 頁數: 135
  • 裝訂: Hardcover
  • ISBN: 3319912038
  • ISBN-13: 9783319912035

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商品描述

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.