Multi-run Memory Tests for Pattern Sensitive Faults
暫譯: 針對模式敏感故障的多次記憶體測試

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

• Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  
• Presents practical algorithms for design and implementation of efficient multi-run tests;
  
• Demonstrates methods verified by analytical and experimental investigations.