Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices 1st Edition

Roccaforte

  • 出版商: Wiley
  • 出版日期: 2020-08-24
  • 售價: $6,030
  • 貴賓價: 9.5$5,729
  • 語言: 英文
  • 頁數: 464
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 3527347100
  • ISBN-13: 9783527347100
  • 相關分類: 半導體

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商品描述

Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors

With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and optoelectronic devices. The authors present detailed explanations of the physical properties of materials and their growth methods. They also include information on GaN-based technology applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers.

Nitride Semiconductor Technology contains an in-depth examination of reliability issues with the materials and offers advice on integrating them with 2D materials for novel high-frequency and high-power devices. The book also contains a review of the most recent advances in the field. This important book:

  • Presents an in-depth overview of properties, growth techniques, and applicability of nitride semiconductors
  • Offers a one-stop resource that covers nitride semiconductor technology from materials to devices
  • Reviews a widerange of nitride semiconductor applications in high-power and high-frequency devices

Written for materials scientists, semiconductor physicists, semiconductor industry professionals, electrical engineers, and electrotechnical industry professionals, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices combines the most recent information on power electronics and optoelectronic applications of nitride semiconductors.

作者簡介

Fabrizio Roccaforte, PhD, is a Senior Researcher of the Italian National Research Council at the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania, Italy. His research interests are in the field of wide band gap semiconductor materials and processing for power electronics devices.

Mike Leszczynski, PhD, is a Professor of the Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress) and a Vicepresident of TopGaN Lasers, Warsaw, Poland. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction.