CMOS Processors and Memories (Hardcover)

CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored.

CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures.

The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described.

CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.

《CMOS處理器和記憶體》在新興計算系統的背景下，探討了集成電路設計的最新技術。書中討論了記憶體和處理器的新設計機會。同時，還探索了碳納米管、石墨烯、鐵電材料和隧道結的新材料，這些材料可以將系統性能提升到標準CMOS之外。

《CMOS處理器和記憶體》分為兩部分：處理器和記憶體。第一部分首先介紹了高性能、低功耗的處理器設計，接著是多核處理的章節。這兩個章節都代表了當前計算行業的最新概念。第三章介紹了異步設計，這仍然對未來的計算需求具有很大的潛力。最後，我們提出了一種「硬體設計空間探索」的方法，用於實現和分析貝葉斯推理框架的硬體。這種方法包括：分析計算成本和探索候選硬體組件，提出使用傳統CMOS和混合納米技術CMOL的各種自定義架構。第一部分以混合CMOS-Nano架構作為結論。

第二部分是關於最新的SRAM、DRAM和快閃記憶體以及新興器件概念的記憶體部分。半導體記憶體是一個很好的例子，它應用了各種類比和邏輯電路來利用記憶體單元的器件物理特性。書中詳細討論了隧道效應、熱電子注入、電荷捕獲（快閃記憶體）等重要的物理效應。還描述了依賴磁化、電子自旋對齊、鐵電效應、內建電位井、量子效應和熱熔化等新興記憶體，如FRAM、PRAM和ReRAM。

《CMOS處理器和記憶體》是任何對未來計算技術的電路設計感興趣的人必讀的書籍。該書由業界和學術界的頂尖國際專家撰寫。它可以用於研究生課程。