Variation-Aware Advanced CMOS Devices and Sram

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.

The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

本書全面介紹了當代互補金屬氧化物半導體（CMOS）器件設計中的重要議題，描述了如何克服由製程引起的隨機變異，例如線邊粗糙度、隨機摻雜波動和工作函數變異，以及新型CMOS器件在高速緩存記憶體（或靜態隨機存取記憶體，SRAM）中的應用。作者強調對製程引起的隨機變異的物理理解，以及新型CMOS器件結構的介紹及其在SRAM中的應用。

本書概述了當前CMOS技術發展面臨的技術困境，即在30納米以下技術節點上，由於製程引起的隨機/固有變異對晶體管性能產生的影響越來越大。因此，對製程引起的隨機/固有變異的物理理解以及解決這些問題的技術解決方案在新型CMOS技術發展中起著關鍵作用。本書旨在為讀者提供對主要隨機變異源的深入理解，以及對每個隨機變異源的表徵。此外，本書還介紹了各種CMOS器件設計，以克服未來CMOS技術中的隨機變異，並強調其在SRAM中的應用。

Prof. Changhwan Shin is an Assistant Professor in School of Electrical and Computer Engineering in University of Seoul. Prof. Shin is a graduate of Korea University (BE) and University of California Berkeley (Ph.D). Also, he is Technical Committee Members for IEEE SOI Conference and European Solid-State Device Research Conference (ESSDERC). His research activities cover Electronic Devices and Integrated Circuits; Advanced electronic device architecture for various types of System-on-Chip(SoC) memory and logic devices/ All-in-one Variability Analysis for Nanometer-scale Electronic Devices/ Post-Silicon Technology (CNT, Graphene) & Bio-applications/ Device-and-Circuit Co-optimization: "Low-Level" Digital/Analog Circuit Design Methodology Development/ Programmable Chip Development using Advanced Electronic Devices.

Prof. Changhwan Shin 是首爾大學電機與電腦工程學院的助理教授。Shin教授畢業於韓國大學（BE）和加州大學伯克利分校（Ph.D）。此外，他還是IEEE SOI Conference和European Solid-State Device Research Conference（ESSDERC）的技術委員會成員。他的研究範圍涵蓋電子器件和集成電路；各種類型的片上系統（SoC）記憶體和邏輯器件的先進電子器件架構；納米級電子器件的全方位變異性分析；後矽技術（CNT、石墨烯）和生物應用；器件和電路的協同優化：「低層次」數位/類比電路設計方法論開發；使用先進電子器件進行可編程芯片開發。