Advances in Semiconductor Lasers and Application to Optoelectronics

This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modelling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the capability of scattering time engineering in novel semiconductor lasers.

本書收錄了新型半導體雷射中發生的基本現象的理論要點，以及選定異質結構雷射的操作原理。要理解異質結構雷射和相關光電子器件中的散射過程，必須考慮電荷載子的尺寸限制以及量子結構中的聲子和光子的作用。事實上，在設計和建模諸如隧道注入雷射、量子井間隙雷射和量子點雷射等新型半導體雷射時，考慮到聲子和載子的限制是非常重要的。充分利用尺寸限制可以實現新型半導體雷射中的散射時間工程能力。