Silicon RF Power Mosfets (Hardcover)

B Jayant Baliga

  • 出版商: World Scientific Pub
  • 出版日期: 2005-04-22
  • 售價: $1,650
  • 貴賓價: 9.8$1,617
  • 語言: 英文
  • 頁數: 302
  • 裝訂: Hardcover
  • ISBN: 9812561218
  • ISBN-13: 9789812561213
  • 下單後立即進貨 (約5~7天)

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商品描述

Description

The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide- Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks.

 

Table of contents

  • RF Power Amplifiers
  • MOSFET Physics
  • Lateral-Diffused MOSFETs
  • Vertical-Diffused MOSFETs
  • Charge-Coupled MOSFETs
  • Super-Linear MOSFETs
  • Planar Super-Linear MOSFETs
  • Dual Trench MOSFETs
  • Hot Carrier Injection Instability
  • Synopsis



商品描述(中文翻譯)

描述

全球蜂窩網絡的普及已經革命了電信系統。從類比到數字射頻技術的轉變,大大增加了可用頻譜的語音流量,並隨後實現了基於數字的文字消息、圖形甚至流媒體視頻的傳遞。數字網絡的部署要求遷移到具有對線性度和效率有嚴格要求的多載波射頻功率放大器。本書描述了作為功率放大器核心的矽功率金屬氧化物半導體場效應晶體管(MOSFET)的物理、設計考慮和射頻性能。本書首次描述了基於超線性工作模式的射頻功率MOSFET的最新發明和商業化。除了對物理的分析處理外,還通過使用數值模擬的結果提供了對晶體管操作的廣泛描述。分析了許多新穎的功率MOSFET結構,並將其性能與目前在2G和3G網絡中使用的側向擴散(LD)MOSFET進行了比較。

目錄

- 射頻功率放大器
- MOSFET物理
- 側向擴散MOSFET
- 垂直擴散MOSFET
- 電荷耦合MOSFET
- 超線性MOSFET
- 平面超線性MOSFET
- 雙溝MOSFET
- 熱載子注入不穩定性
- 概要