Gallium Nitride Power Devices
- 出版商: Pan Stanford Publish
- 出版日期: 2017-06-27
- 售價: $5,250
- 貴賓價: 9.5 折 $4,988
- 語言: 英文
- 頁數: 308
- 裝訂: Hardcover
- ISBN: 981477409X
- ISBN-13: 9789814774093
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相關分類:
半導體、材料科學 Meterials、物理學 Physics
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相關主題
商品描述
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.
This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.
GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
商品描述(中文翻譯)
GaN被認為是下一代功率器件應用中最有前景的材料候選者,因為它具有獨特的材料特性,例如能隙、高擊穿場和高電子遷移率。因此,包括美國、歐盟、日本和中國在內的許多國家將GaN功率器件技術列為首要發展項目。
本書全面介紹了GaN功率器件技術,包括材料生長、性能分析、器件結構設計、製造工藝、可靠性、故障分析和封裝等。對於從事GaN功率器件研究的學生和研究人員以及相關行業的從業人員,本書提供了有用的信息。
GaN晶片生長技術來自Enkris Semiconductor,目前是商業化GaN晶片的領先企業之一。第3章和第7章關於GaN晶體管製造工藝和GaN垂直功率器件的編輯者是劉志宏博士,他在GaN器件上已經工作了十多年。第2章和第5章關於極化效應特性和AlGaN/GaN異質結構場效應晶體管的原始演示是由西南交通大學的研究人員撰寫的。第6章、第8章和第9章關於表面通過、可靠性和封裝技術的編輯者是來自中國南方科技大學的一組研究人員。