Complete Guide to Semiconductor Devices, 2/e

Kwok K. Ng

  • 出版商: Wiley
  • 出版日期: 2002-07-25
  • 售價: $1,235
  • 語言: 英文
  • 頁數: 768
  • 裝訂: Hardcover
  • ISBN: 0471202401
  • ISBN-13: 9780471202400
  • 相關分類: 半導體
  • 已絕版

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商品描述

Provides an overview of a complete collection of semiconductor devices.
* Presents self-contained data on over 180 device variations.
* Suitable for a wide variety of audiences--from students to practitioners to laypeople.

Table of Contents

Preface.

Preface to the First Edition.

Introduction.

DIODES I: RECTIFIERS.

p-n Junction Diode.

p-i-n Diode.

Schottky-Barrier Diode.

Planar-Doped-Barrier (PDB) Diode.

Isotype Heterojunction.

DIODES II: NEGATIVE RESISTANCE N-SHAPED.

Tunnel Diode.

Transferred-Electron Device (TED).

Resonant-Tunneling Diode.

Resonant-Interband-Tunneling (RIT) Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Interband-Tunneling Diode.

Real-Space-Transfer (RST) Diode.

DIODES III: NEGATIVE RESISTANCE S-SHAPED.

Metal-Insulator-Semiconductor Switch (MISS).

Planar-Doped-Barrier (PDB) Switch.

Amorphous Threshold Switch.

Heterostructure Hot-Electron Diode (HHED).

DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME.

Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode.

Barrier-Injection Transit-Time (BARITT) Diode.

RESISTIVE AND CAPACITIVE DEVICES.

Resistor.

Metal-Oxide-Semiconductor (MOS) Capacitor.

Charge-Coupled Device (CCD).

TRANSISTORS I: FIELD-EFFECT.

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Junction Field-Effect Transistor (JFET).

Metal-Semiconductor Field-Effect Transistor (MESFET).

Modulation-Doped Field-Effect Transistor (MODFET).

Permeable-Base Transistor.

Static-Induction Transistor (SIT).

Real-Space-Transfer (RST) Transistor.

Planar-Doped Field-Effect Transistor.

Surface-Tunnel Transistor.

Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET).

Stark-Effect Transistor.

Velocity-Modulation Transistor (VMT).

TRANSISTOR II: POTENTIAL-EFFECT.

Bipolar Transistor.

Tunneling Hot-Electron-Transfer Amplifier (THETA).

Metal-Base Transistor.

Bipolar Inversion-Channel Field-Effect Transistor (BICFET).

Tunnel-Emitter Transistor (TETRAN).

Planar-Doped-Barrier (PDB) Transistor.

Heterojunction Hot-Electron Transistor (HHET).

Induced-Base Transistor.

Resonant-Tunneling Bipolar Transistor (RTBT/RBT).

Resonant-Tunneling Hot-Electron Transistor (RHET).

Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT).

Spin-Valve Transistor.

NONVOLATILE MEMORIES.

Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor.

Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor.

THYRISTORS AND POWER DEVICES.

Silicon-Controlled Rectifier (SCR).

Insulated-Gate Bipolar Transistor (IGBT).

Static-Induction Thyristor (SIThy).

Unijunction Transistor.

PHOTONICS I: LIGHT SOURCES.

Light-Emitting Diode (LED).

Injection Laser.

PHOTONICS II: PHOTODETECTORS.

Photoconductor.

p-i-n Photodiode.

Schottky-Barrier Photodiode.

Charge-Coupled Image Sensor (CCIS).

Avalanche Photodiode (APD).

Phototransistor.

Metal-Smiconductor-Metal (MSM) Photodetector.

Quantum-Well Infrared Photodetector (QWIP).

Quantum-Dot Infrared Photodetector (QDIP).

Blocked-Impurity-Band (BIB) Photodetector.

Negative-Electron-Affinity (NEA) Photocathode.

Photon-Drag Detector.

PHOTONICS III: BISTABLE OPTICAL DEVICES.

Self-Electrooptic-Effect Device (SEED).

Bistable Etalon.

PHOTONICS IV: OTHER DEVICES.

Solar Cell.

Electroabsorption Modulator.

Thermistor.

Hall Plate.

Strain Gauge (Gage).

Interdigital Transducer (IDT).

Ion-Sensitive Field-Effect Transistor (ISFET).

Appendix A: Selected Nonsemiconductor Devices.

Appendix B: Physical Phenomena.

Appendix C: General Applications of Device Groups.

Appendix D: Physical Properties.

Appendix E: Background Information.

Index.