Modern Microwave Transistors: Theory, Design, and Performance (Hardcover)
Frank Schwierz, Juin J. Liou
- 出版商: Wiley-Interscience
- 出版日期: 2002-12-05
- 售價: $1,100
- 貴賓價: 9.8 折 $1,078
- 語言: 英文
- 頁數: 504
- 裝訂: Hardcover
- ISBN: 0471417785
- ISBN-13: 9780471417781
Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Most of the attention has been focused on Si VLSI (Very Large Scale Integration) technology, the backbone of the consumer semiconductor electronics industry. Microwave transistors went almost unnoticed until the early 1980s because they were primarily utilized in military and space applications. The recent far-reaching upheavals in civil communications technology–especially wireless communication such as cell phones–have thrust microwave transistor technology into the limelight as never before.
Modern Microwave Transistors: Theory, Design, and Performance prepares the engineer with a wide-ranging introduction and overview of microwave transistors. Written by two acknowledged experts, this guide to one of the fastest growing fields in semiconductor electronics offers insight into:
- History and concepts of microwave transistors
- Semiconductor and heterostructure physics
- Properties of the semiconductor materials used in microwave transistors, such as Si, SiGe, III-V compounds, and III-nitrides
- Device structures, analysis, and design of the different types of microwave transistors including MESFETs, HEMTs, MOSFETs, BJTs, and HBTs
- State-of-the-art performance of microwave transistors
- Current and emerging applications of microwave transistors
A timely and comprehensive contribution to the field, Modern Microwave Transistors is an unmatched resource for RF, device, circuit and wireless communications engineers, and others with an interest in transistor technology. It will also be useful for students in the field of semiconductor and microwave electronics
Table of Contents
Background on Microwave Transistors.
Basic Semiconductor Physics.
High Electron Mobility Transistors.
Silicon Bipolar Junction Transistors.
Heterojunction Bipolar Transistors.
Appendix A.1: Frequently Used Symbols.
Appendix A.2: Physical Constants and Unit Conversions.
Appendix A.3: Microwave Frequency Bands.
Appendix A.4: Two-Port Calculations.
Appendix A.5: Important Material Properties of Selected Materials.