CMOS Memory Circuits (Hardcover)
Tegze P. Haraszti
- 出版商: Springer
- 出版日期: 2000-09-30
- 售價: $1,100
- 貴賓價: 9.5 折 $1,045
- 語言: 英文
- 頁數: 551
- 裝訂: Hardcover
- ISBN: 0792379500
- ISBN-13: 9780792379508
貴賓價: $1,764Quantum Transport : Atom to Transistor
貴賓價: $7,305Nanoelectronic Circuit Design (Hardcover)
貴賓價: $5,776Robust SRAM Designs and Analysis (Hardcover)
貴賓價: $5,776Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield (Hardcover)
貴賓價: $1,470The Physics And Modeling of Mosfets (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology (Asset)) (Hardcover)
貴賓價: $7,811Quantum Mechanics (2 vol. set) (Paperback)
貴賓價: $1,205Microelectronic Circuits: Analysis and Design, 2/e (IE-Paperback)
貴賓價: $3,294Computational Lithography (Hardcover)
貴賓價: $1,216Fundamental Principles of Optical Lithography: The Science of Microfabrication
CMOS Memory Circuits is a systematic
and comprehensive reference work designed to aid in the understanding of CMOS
memory circuits, architectures, and design techniques.
CMOS technology is the dominant fabrication method and almost the exclusive choice for semiconductor memory designers.
Both the quantity and the variety of complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS memories are traded as mass-products worldwide and are diversified to satisfy nearly all practical requirements in operational speed, power, size, and environmental tolerance. Without the outstanding speed, power, and packing density characteristics of CMOS memories, neither personal computing, nor space exploration, nor superior defense systems, nor many other feats of human ingenuity could be accomplished. Electronic systems need continuous improvements in speed performance, power consumption, packing density, size, weight, and costs. These needs continue to spur the rapid advancement of CMOS memory processing and circuit technologies.
CMOS Memory Circuits is essential for those who intend to (1) understand, (2) apply, (3) design and (4) develop CMOS memories.
Preface. Conventions. 1. Introduction to CMOS Memories. 2. Memory Cells. 3. Sense Amplifiers. 4. Memory Constituent Subcircuits. 5. Reliability and Yield Improvement. 6. Radiation Effects and Circuit Hardening. References. Index