Ionizing Radiation Effects in Electronics: From Memories to Imagers（Hardcover）

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques.

The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then:

• Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories―static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories
• Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits
• Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs)

Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

《電子元件中的電離輻射效應：從記憶體到影像感測器》提供了對最先進半導體元件受電離輻射影響的全面介紹。本書還提供了現代抗輻射技術的寶貴見解。

本書首先提供了有關輻射效應的重要背景資訊，包括其基本機制以及使用蒙特卡羅方法模擬輻射傳輸和對電子元件的影響。接著，本書：

- 解釋了輻射對數字商業設備的影響，包括微處理器和揮發性和非揮發性記憶體，如靜態隨機存取記憶體（SRAM）、動態隨機存取記憶體（DRAM）和快閃記憶體。
- 檢視了軟錯誤、總劑量和位移損傷等問題，以及針對數字電路、現場可程式閘陣列（FPGA）和混合類比電路的硬化設計解決方案。
- 探討了輻射對光纖和影像感測器（如互補金屬氧化物半導體（CMOS）感測器和電荷耦合器件（CCD））的影響。

本書包含實際案例、個案研究、廣泛的參考文獻，以及來自業界和學術界領先專家的貢獻。《電子元件中的電離輻射效應：從記憶體到影像感測器》適用於希望瞭解輻射效應的新手，以及尋找更高級材料或有效利用束流時間的輻射專家。