Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design
暫譯: 場效應晶體管技術：從可持續性到下一代 VLSI 設計
Raman, Ashish, Singh, Prabhat, Kumar, Naveen
相關主題
商品描述
The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.
Features
- Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
- Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
- Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
- Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
商品描述(中文翻譯)
這段文字全面探討了場效應晶體管技術中的轉變，涵蓋了歷史演變、當前進展和未來趨勢。
**特色**
- 突顯場效應晶體管在超大規模集成電路（VLSI）和後補型金屬氧化物半導體設計策略中的重要性。
- 討論設計挑戰、場效應晶體管的不同建模方面以及半導體設計中的新興材料。
- 展示模擬在預測裝置行為、提升性能和研究新型裝置設計中的重要性。
- 涵蓋量子計算、技術計算機輔助設計中的裝置模擬過程、碳納米管和有機場效應晶體管等主題。
這段文字主要針對電機工程、電氣與通訊工程、材料科學、納米科學和納米技術領域的高年級本科生、研究生和學術研究人員撰寫。
作者簡介
Ashish Raman works as an associate professor, in the Department of Electronics and Communication Engineering, at Dr. B R Ambedkar National Institute of Technology Jalandhar Punjab, India. His main areas of interest are electronic devices and circuits, device modeling, device design and simulation, MEMS, and high-power devices. He has contributed research articles/papers to SCI, Scopus, and other reputed journals like IEEE Transactions of Electron Devices, IEEE Transactions on Nanotechnology, Elsevier, and Springer journals, and at international conferences. He is a member of the IEEE Electron Devices Society, the IEEE Solid-State Circuits Society, and the Institution of Engineers Society, India.
Prabhat Singh has been a Postdoctoral Fellow scholar, in the School of Electrical and Computer Sciences, at Indian Institute of Technology, Bhubaneswar, Odisha, India. His expertise is in cryogenic CMOS, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, nanoscale device design, and simulation. He has contributed research articles/papers to SCI, Scopus, and reputed journals.
Naveen Kumar is a post-doctoral research associate, in the Device Modelling Group, James Watt School of Engineering, at the University of Glasgow, United Kingdom. His research revolves around different semiconductor devices including ultra-scale FETs, solar cells, photodiodes, HEMT, and quantum dots, and their prospective applications. He has authored/co-authored more than 35 research articles/ papers in reputed international journals and conference proceedings. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Sarabdeep Singh is currently working as an assistant professor, in the Department of Electronics and Communications Engineering, at Model Institute of Engineering and Technology, Jammu, India. His current research interests are microelectronics, sensors, and semiconductor devices focusing on Nanowire FETs, IMOS FETs, and Negative-Capacitance FETs. He has, to his credit, over twenty research papers published in national and international journals.
作者簡介(中文翻譯)
Ashish Raman 擔任印度旁遮普邦賈蘭達爾的 Dr. B R Ambedkar 國立技術學院電子與通信工程系的副教授。他的主要研究領域包括電子設備與電路、設備建模、設備設計與模擬、微機電系統 (MEMS) 以及高功率設備。他已向 SCI、Scopus 及其他知名期刊如 IEEE Transactions of Electron Devices、IEEE Transactions on Nanotechnology、Elsevier 和 Springer 期刊，以及國際會議發表了多篇研究文章/論文。他是 IEEE 電子設備學會、IEEE 固態電路學會及印度工程師協會的成員。
Prabhat Singh 曾在印度奧里薩邦布巴內斯瓦爾的印度理工學院電氣與計算機科學學院擔任博士後研究員。他的專長包括低溫 CMOS、固態設備、類比互補金屬氧化物半導體 (CMOS) 集成電路、納米尺度設備設計與模擬。他已向 SCI、Scopus 及其他知名期刊發表了多篇研究文章/論文。
Naveen Kumar 是英國格拉斯哥大學詹姆斯·瓦特工程學院的博士後研究助理。他的研究圍繞不同的半導體設備，包括超大規模場效應晶體管 (FET)、太陽能電池、光二極體、HEMT 及量子點及其潛在應用。他在知名國際期刊和會議論文集中已發表/共同發表超過 35 篇研究文章/論文。他的主要研究興趣包括半導體設備物理、微機電系統 (MEMS)/奈米機電系統 (NEMS) 及自旋電子學。
Sarabdeep Singh 目前在印度查謨的模型工程與技術學院電子與通信工程系擔任助理教授。他目前的研究興趣包括微電子學、傳感器及半導體設備，專注於納米線 FET、IMOS FET 及負電容 FET。他已在國內外期刊上發表超過二十篇研究論文。
