Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors
暫譯: 多維場效應電晶體中的經典與量子傳輸
Kumar, Naveen, Kumar, Prateek, Dixit, Ankit
- 出版商: CRC
- 出版日期: 2025-09-29
- 售價: $6,240
- 貴賓價: 9.5 折 $5,928
- 語言: 英文
- 頁數: 336
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1032895799
- ISBN-13: 9781032895796
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相關分類:
電機學 Electric-machinery
海外代購書籍(需單獨結帳)
商品描述
This book covers the recent advancements in the transport models of various cutting-edge technology semiconductor devices for sensing, circuits, in-memory, or neuromorphic computing.
Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors offers a wide range of topics with images and informative explanations. It begins with an exploration of the fundamentals of FET functioning, emphasizing how behavior is governed by classical models. As the semiconductor industry pushes the boundaries of miniaturization and performance, multi-dimensional field effect transistors (MuDFETs) and emerging material platforms are redefining the foundations of modern electronics. This book offers a deep and insightful journey through the evolving landscape of advanced FET architectures--from classical conduction models to quantum and ballistic transport regimes. Authored by experts across academia and research institutions, this book offers in-depth discussions on multi-dimensional and junctionless FETs, 2D materials and TMDCs, nanosheet transistors, and TFET-based biosensors.
Whether exploring the quantum limits of device physics or developing real-world sensing solutions, this collection bridges theory and application in one compelling volume. This book serves as a vital reference for academics, graduate students, and professionals working in nanoelectronics, semiconductor devices, biosensors, and photonic field.
商品描述(中文翻譯)
這本書涵蓋了各種尖端技術半導體設備在感測、電路、內存或類神經計算方面的傳輸模型的最新進展。《多維場效應晶體管中的經典到量子傳輸》提供了廣泛的主題，並附有圖片和詳細的解釋。書中首先探討了場效應晶體管（FET）的基本運作原理，強調其行為是如何受到經典模型的支配。隨著半導體產業在微型化和性能方面不斷突破界限，多維場效應晶體管（MuDFETs）和新興材料平台正在重新定義現代電子學的基礎。本書深入且富有洞察力地探討了先進FET架構的演變，從經典導電模型到量子和彈道傳輸範疇。這本書由來自學術界和研究機構的專家撰寫，提供了對多維和無接面FET、二維材料和過渡金屬二硫化物（TMDCs）、納米片晶體管以及基於隧道場效應晶體管（TFET）的生物感測器的深入討論。
無論是探索設備物理的量子極限，還是開發現實世界的感測解決方案，這本書都在一個引人入勝的卷冊中橋接了理論與應用。本書是學術界、研究生以及在納米電子學、半導體設備、生物感測器和光子領域工作的專業人士的重要參考資料。
作者簡介
Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.
Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.
作者簡介(中文翻譯)
Naveen Kumar 於印度賈蘭達爾的 Dr. B. R. Ambedkar 國立技術學院獲得博士學位。Kumar 博士是格拉斯哥大學電子與納米工程部的博士後研究助理。他的研究圍繞不同的半導體設備，包括超縮放的場效應晶體管 (FETs)、太陽能電池、光電二極體、HEMT、量子點及其潛在應用。他的主要研究興趣包括半導體設備物理、微機電系統 (MEMS/NEMS) 和自旋電子學。
Prateek Kumar 於印度德里大學獲得博士學位。Kumar 博士是德累斯頓工業大學電子設備與集成電路主席的博士後研究助理。他的研究包括下一代 SiGe HBTs、反饋場效應晶體管 (FETs) 和基於石墨烯的晶體管，特別強調量子和半經典傳輸。他的主要研究興趣包括半導體設備物理、微機電系統 (MEMS/NEMS) 和自旋電子學。
Ankit Dixit 於印度賈巴爾普爾的印度信息技術設計與製造學院獲得電子與通信工程博士學位。他的研究集中於 III-V 材料在低功耗設備和生物傳感器應用中的應用。Dixit 博士目前在格拉斯哥大學的 DeepNano 團隊擔任研究助理，負責進行納米電子設備模擬和新型設備的變異性分析研究。
Prabhat Singh 於印度喜馬偕爾邦哈米爾普爾的國立技術學院獲得博士學位。Singh 博士是奧里薩邦 IIT 布巴內斯瓦爾電氣與計算機科學學院的博士後研究助理。他的研究圍繞不同的半導體設備，包括低溫 CMOS、超縮放的場效應晶體管 (FETs)、太陽能電池、量子點及其潛在應用。他的主要研究興趣包括半導體設備物理、固態設備、類比互補金屬氧化物半導體 (CMOS) 集成電路，以及納米級設備設計與模擬。
