Analog Electronics for Radiation Detection
暫譯: 輻射探測的類比電子學

Turchetta, Renato

Analog Electronics for Radiation Detection
  • 出版商: CRC
  • 出版日期: 2018-03-29
  • 售價: $3,790
  • 貴賓價: 9.5 折 $3,601
  • 語言: 英文
  • 頁數: 290
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 1138586021
  • ISBN-13: 9781138586024
  • 相關分類: 電路學 Electric-circuits

    • 海外代購書籍(需單獨結帳)

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商品描述

Analog Electronics for Radiation Detection showcases the latest advances in readout electronics for particle, or radiation, detectors. Featuring chapters written by international experts in their respective fields, this authoritative text:

  • Defines the main design parameters of front-end circuitry developed in microelectronics technologies
  • Explains the basis for the use of complementary metal-oxide semiconductor (CMOS) image sensors for the detection of charged particles and other non-consumer applications
  • Delivers an in-depth review of analog-to-digital converters (ADCs), evaluating the pros and cons of ADCs integrated at the pixel, column, and per-chip levels
  • Describes incremental sigma-delta ADCs, time-to-digital converter (TDC) architectures, and digital pulse-processing techniques complementary to analog processing
  • Examines the fundamental parameters and front-end types associated with silicon photomultipliers used for single visible-light photon detection
  • Discusses pixel sensors with per-pixel TDCs, channel density challenges, and emerging 3D technologies interconnecting detectors and electronics

Thus, Analog Electronics for Radiation Detection provides a single source for state-of-the-art information on analog electronics for the readout of radiation detectors.

商品描述(中文翻譯)

輻射檢測的類比電子學展示了粒子或輻射檢測器讀出電子學的最新進展。本書由各自領域的國際專家撰寫章節，這本權威的著作：


  • 定義了在微電子技術中開發的前端電路的主要設計參數

  • 解釋了使用互補金屬氧化物半導體 (CMOS) 圖像感測器檢測帶電粒子及其他非消費性應用的基礎

  • 提供了類比數位轉換器 (ADC) 的深入回顧，評估在像素、列和每晶片級別集成的 ADC 的優缺點

  • 描述了增量式 sigma-delta ADC、時間數位轉換器 (TDC) 架構，以及與類比處理互補的數位脈衝處理技術

  • 檢視了與用於單一可見光光子檢測的矽光倍增管相關的基本參數和前端類型

  • 討論了具有每像素 TDC 的像素感測器、通道密度挑戰，以及新興的 3D 技術，這些技術將檢測器和電子設備互連

因此，輻射檢測的類比電子學提供了有關輻射檢測器讀出的類比電子學的最先進資訊的單一來源。

作者簡介

Renato Turchetta is leading the development of high-end complementary metal-oxide semiconductor (CMOS) image sensors at the Rutherford Appleton Laboratory in Didcot, UK, the largest national laboratory in the United Kingdom owned and operated by the Science and Technology Facilities Council (STFC). He earned his master's degree (Laurea) from the University of Milan, Italy, in 1988 and his PhD in applied physics from the University of Strasbourg, France, in 1991. He worked as an assistant professor there until 1999, the year when he moved to the Rutherford Appleton Laboratory. In his career, he has worked on the development of semiconductor detectors and their readout microelectronics before focusing on CMOS image sensors. He has worked in this area for more than 15 years. He is the author and coauthor of several patents and more than 100 papers that were published in international journals. He is currently an acting member of the scientific committee for Image Sensors Europe, the International Congress on High-Speed Imaging and Photonics, and the Pixel and CPIX conferences.

作者簡介(中文翻譯)

Renato Turchetta 目前在英國Didcot的Rutherford Appleton Laboratory領導高端互補金屬氧化物半導體（CMOS）影像感測器的開發，該實驗室是英國最大的國家實驗室，由科學與技術設施委員會（STFC）擁有和運營。他於1988年在意大利米蘭大學獲得碩士學位（Laurea），並於1991年在法國斯特拉斯堡大學獲得應用物理學博士學位。在那裡，他擔任助理教授直到1999年，當年他轉至Rutherford Appleton Laboratory。在他的職業生涯中，他曾從事半導體探測器及其讀出微電子學的開發，之後專注於CMOS影像感測器。他在這個領域工作了超過15年。他是多項專利的作者和共同作者，並在國際期刊上發表了超過100篇論文。他目前是Image Sensors Europe、國際高速影像與光子學會議以及Pixel和CPIX會議的科學委員會的執行成員。

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