Nanoscale Semiconductor Memories: Technology and Applications (Hardcover)

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

奈米級記憶體在各個領域都被廣泛使用，從iPhone到超級電腦，每個電子設備都至少包含一種這樣的記憶體。《奈米級半導體記憶體：技術與應用》涵蓋了目前和原型技術，將奈米級記憶體技術的最新研究集中在一個地方。它還介紹了奈米級記憶體技術所帶來的各種應用。

本書首先介紹了SRAM的相關內容，討論了隨著技術規模的擴大所帶來的設計挑戰，並提供了減輕SRAM輻射誘發故障的設計策略。接著，本書討論了當前最先進的DRAM技術，以及開發高性能感測放大器電路的需求。接下來，本書介紹了無電容1T DRAM的新概念，即先進RAM或A-RAM，並討論了基於量子點（QD）的快閃記憶體。

在此基礎上，本書介紹了STT-RAM，重點介紹了可擴展的嵌入式STT-RAM，以及磁性磁域壁“賽道”記憶體的物理和工程學。本書還討論了應用於相變記憶體器件的最先進建模技術，並詳細回顧了RRAM，突出了其操作物理特性，並分析了目前正在研究的不同材料系統。

尋找適合所有“理想記憶體”要求的通用記憶體仍在進行中，這些要求包括高密度存儲、低功耗運行、無與倫比的速度、高耐久性和低成本。本書採用跨學科的方法，橋接了技術和應用問題，為開發定制設計的記憶體系統奠定了基礎。