Fundamentals of Power Semiconductor Devices 2/e

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.

《功率半導體器件基礎》深入探討了電力電子行業常用的功率半導體器件的操作物理學。展示了解釋所有功率半導體器件操作的分析模型。該書主要關注矽器件，並包括新興碳化矽器件的獨特特性和設計要求。

Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees.

Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.

Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October 2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.

Jayant Baliga是國際知名的功率半導體器件專家。他是美國國家工程院院士和IEEE的會士。他在通用電氣研究與開發中心（位於紐約州斯克內克塔迪）工作了15年，領導了他們的功率器件項目，並被授予最高的科學職位Coolidge Fellow。他於1988年加入NCSU（北卡羅來納州立大學）擔任正教授，並於1997年晉升為「傑出大學教授」。在他的許多NCSU榮譽中，他獲得了1998年由北卡羅來納大學董事會頒發的O. Max Gardner獎，該獎項授予在16所成員大學中對人類福祉做出「最大貢獻」的人；以及2011年由NCSU董事會頒發的Alexander Quarles Holladay卓越獎章，該獎項是NCSU的最高榮譽。

Baliga教授撰寫/編輯了18本書籍和500多篇科學文章。他獲得了120項美國專利。IEEE多次表彰他，最近在倫敦的Whitehall Palace頒發了「Lamme Medal」。當紀念晶體管發明50週年時，Scientific American雜誌將他列為「半導體革命的八位英雄」之一。

Baliga教授在通用電氣發明、開發和商業化了絕緣栅雙極性晶體管（IGBT）。IGBT廣泛應用於消費品、工業、照明、交通、醫療、可再生能源等經濟部門。它使汽油和電能的使用大幅減少，為消費者節省了巨額成本，同時減少了全球二氧化碳排放。有關IGBT應用和社會影響的詳細報告可供參考。他於2011年10月在白宮由奧巴馬總統頒發了美國政府最高形式的技術和創新國家獎章；並於2012年10月由北卡羅來納州州長普爾迪頒發了科學北卡羅來納獎。