Transient Electro-Thermal Modeling on Power Semiconductor Devices
暫譯: 功率半導體器件的瞬態電熱模型分析

Gachovska, Tanya Kirilova, Hudgins, Jerry, Du, Bin

  • 出版商: Springer
  • 出版日期: 2013-11-26
  • 售價: $1,440
  • 貴賓價: 9.5$1,368
  • 語言: 英文
  • 頁數: 68
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 3031013786
  • ISBN-13: 9783031013782
  • 相關分類: 電力電子 Power-electronics
  • 海外代購書籍(需單獨結帳)

商品描述

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

商品描述(中文翻譯)

本書介紹了雙極性功率半導體裝置的基於物理的電熱模型,包括其封裝,並描述了它們在 MATLAB 和 Simulink 中的實現。這是我們第一本書《雙極性功率半導體裝置建模》的延續。裝置的電氣模型是通過將裝置劃分為不同區域來開發的,並分析每個區域的操作以及界面之間的相互作用,使用基本的半導體物理方程來描述裝置行為。傅立葉級數解法用於解決裝置輕摻雜漂移區的雙極擴散方程。除了外部電氣特性外,還可以使用這些模型獲得內部物理和電氣信息,例如結電壓和裝置不同區域的載流子分佈。使用電氣裝置模型計算的瞬時耗散功率作為整個模組或封裝的熱模型(具有恆定和非恆定熱阻及熱容量的 RC 網絡,或傅立葉熱模型)的輸入,該模型計算裝置的結溫。一旦計算出更新的結溫,則重新計算溫度依賴的半導體材料參數,並在模擬的下一個時間步驟中與裝置電氣模型一起使用。基於物理的電熱模型可用於優化裝置和封裝設計,也可用於驗證提取的裝置參數。熱模型可以單獨用於監測功率半導體裝置的結溫,並且所得到的模擬結果可作為半導體功率裝置健康和可靠性的指標。

作者簡介

Tanya Kirilova Gachovska received a M.Eng. degree in electrical engineering specializing in Automation of Production and a Ph.D. in electrical engineering specializing in Pulsed Electric Fields(PEF) from the University of Ruse, Bulgaria, in 1995 and 2003, respectively. She worked as an assistant professor from 1999-2003 at the University of Ruse. She conducted research for two years and taught for a semester at McGill University in Montreal, Canada. She had an 18 months post-doc experience on PEF at the University of Nebraska Lincoln, USA. Tanya finished her second Ph.D. in electrical engineering specializing in Power Electronics specifically Modeling of Power Semiconductor Devices in 2012. During her studies, she has taught different courses and labs and continued a collaboration for PEF research with the University of Ruse, McGill, UNL, and two Algerians universities. She is currently at Solantro Semiconductor Inc. She is the author or co-author of more than 30 technical papers and conference presentations, and holds a world patent in PEF. Professor Hudgins is a native of West Texas. He attended Texas Tech University, in Lubbock, Texas, where he received a Ph.D. degree in electrical engineering in 1985. Dr. Hudgins served as Associate and Interim Department Chair of Electrical and Computer Engineering at the University of South Carolina prior to joining the University of Nebraska as Chair of the Electrical Engineering Department. Currently, he is Director of the Nebraska Wind Applications Center and Associate Director of the Nebraska Center for Energy Sciences Research. His research involves power electronic device characterization and modeling, power electronics design, and renewable energy systems. In 2000, he was named as an IEEE Third Millenium Medal recipient for "Outstanding Contributions in the area of Power Electronics." Dr. Hudgins is a Fellow of the IEEE and a member of the IEEE Board of Directors (Division II Director). Dr.Hudgins servedas the Presidentof the IEEE Power Electronics Society (PELS) for the years of 1997 and 1998 and as President of the IEEE Industry Applications Society (IAS) in 2003. Dr. Hudgins has published over 130 technical papers and book chapters concerning power semiconductors, power electronics, renewable energy systems, and engineering education. He has worked with numerous power semiconductor and equipment manufacturing companies. Professor Hudgins is a native of West Texas. He attended Texas Tech University, in Lubbock, Texas, where he received a Ph.D. degree in electrical engineering in 1985. Dr. Hudgins served as Associate and Interim Department Chair of Electrical and Computer Engineering at the University of South Carolina prior to joining the University of Nebraska as Chair of the Electrical Engineering Department. Currently, he is Director of the Nebraska Wind Applications Center and Associate Director of the Nebraska Center for Energy Sciences Research. His research involves power electronic devicecharacterization and modeling, power electronics design, and renewable energy systems. In 2000, he was named as an IEEE Third Millenium Medal recipient for "Outstanding Contributions in the area of Power Electronics." Dr. Hudgins is a Fellow of the IEEE and a member of the IEEE Board of Directors (Division II Director). Dr.Hudgins servedas the President of the IEEE Power Electronics Society (PELS) for the years of 1997 and 1998 and as President of the IEEE Industry Applications Society (IAS) in 2003. Dr. Hudgins has published over 130 technical papers and book chapters concerning power semiconductors, power electronics, renewable energy systems, and engineering education. He has worked with numerous power semiconductor and equipment manufacturing companies. Enrico Santi received a bachelor's degree in electrical engineering from the University of Padua, Padua, Italy, in 1988, and a Ph.D. degree from the California Institute of Technology (Caltech) in 1994. Since 1998, he has been withthe Department of Electrical Engineering of the University of South Carolina, where he is currently an Associate Professor. He has published over 100 papers on power electronics and modeling and simulation in international journals and conference proceedings. His research interests include switched-mode power converters, advanced modeling and simulation of power systems, modeling and simulation of semiconductor power devices, and control of power electronic systems. Dr. Santi was the recipient of the National Science Foundation CAREER Award in 2004 and the IEEE Industry Applications Society William M. Portnoy Paper Award in 2003, 2005, and 2006.

作者簡介(中文翻譯)

Tanya Kirilova Gachovska於1995年和2003年分別在保加利亞魯塞大學獲得電機工程碩士學位,專攻生產自動化,以及電機工程博士學位,專攻脈衝電場(Pulsed Electric Fields, PEF)。她於1999年至2003年在魯塞大學擔任助理教授。她在加拿大蒙特利爾的麥吉爾大學進行了兩年的研究,並教授了一個學期的課程。她在美國內布拉斯加州林肯大學的PEF研究中擁有18個月的博士後經驗。Tanya於2012年完成了第二個電機工程博士學位,專攻電力電子,特別是電力半導體設備的建模。在她的學習期間,她教授了不同的課程和實驗室,並持續與魯塞大學、麥吉爾大學、內布拉斯加大學林肯分校及兩所阿爾及利亞大學進行PEF研究的合作。她目前在Solantro Semiconductor Inc.工作。她是30多篇技術論文和會議報告的作者或合著者,並持有PEF的全球專利。

Hudgins教授是德克薩斯州西部的本地人。他在德克薩斯州拉伯克的德克薩斯科技大學就讀,於1985年獲得電機工程博士學位。在加入內布拉斯加大學擔任電機工程系主任之前,Hudgins博士曾擔任南卡羅來納大學電機與計算機工程系的副系主任和臨時系主任。目前,他是內布拉斯加風能應用中心的主任及內布拉斯加能源科學研究中心的副主任。他的研究涉及電力電子設備的特性化和建模、電力電子設計以及可再生能源系統。2000年,他因在電力電子領域的傑出貢獻而被授予IEEE第三千年獎章。Hudgins博士是IEEE的會士,並且是IEEE董事會成員(第二分部主任)。Hudgins博士在1997年和1998年擔任IEEE電力電子學會(PELS)會長,並在2003年擔任IEEE工業應用學會(IAS)會長。Hudgins博士已發表超過130篇有關電力半導體、電力電子、可再生能源系統和工程教育的技術論文和書籍章節。他曾與多家電力半導體和設備製造公司合作。

Enrico Santi於1988年在意大利帕多瓦大學獲得電機工程學士學位,並於1994年在加州理工學院(Caltech)獲得博士學位。自1998年以來,他一直在南卡羅來納大學的電機工程系工作,目前擔任副教授。他在國際期刊和會議論文集中發表了超過100篇有關電力電子和建模與模擬的論文。他的研究興趣包括開關模式電源轉換器、電力系統的先進建模與模擬、半導體電力設備的建模與模擬,以及電力電子系統的控制。Santi博士於2004年獲得國家科學基金會的CAREER獎,並於2003年、2005年和2006年獲得IEEE工業應用學會William M. Portnoy論文獎。

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