ESD : Failure Mechanisms and Models (Hardcover)

Steven H. Voldman

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商品描述

<內容簡介>

Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics.

This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology.

Look inside for extensive coverage on:

  • failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems;
  • electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power,  gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR),  tunneling magneto-resistor (TMR),  devices; micro electro-mechanical (MEM) systems, and  photo-masks and reticles; 
  • practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis);
  • the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s  products. 

ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.

商品描述(中文翻譯)

靜電放電(ESD)故障機制在從微電子到納米電子的技術中持續影響半導體元件和系統。本書以故障分析和案例研究的方式研究了電氣過壓、ESD和閂住現象。它從一個通用的角度清楚地揭示了故障的物理原理,然後研究了特定技術、電路和系統中的故障機制。本書獨特之處在於既涵蓋了故障機制,又提供了從技術或電路方法修復問題的實際解決方案。

詳細內容包括:
- 故障分析工具、半導體技術的EOS和ESD故障源和故障模型,以及如何使用故障分析來設計更強健的半導體元件和系統;
- 電熱模型和技術,討論的最新技術包括CMOS、BiCMOS、絕緣體上硅(SOI)、雙極技術、高壓CMOS(HVCMOS)、射頻CMOS、智能功率、砷化鎵(GaAs)、氮化鎵(GaN)、磁阻(MR)、巨磁阻(GMR)、隧道磁阻(TMR)器件、微機電(MEM)系統以及光罩和掩模;
- 使用故障分析來理解ESD電路操作、溫度分析、電源分配、地規則制定、內部匯流排分配、電流路徑分析、品質指標等實用方法(將理論與實際分析相連接);
- 通過案例研究突出顯示了技術的每個關鍵元素(從被動元件、主動元件到電路、子系統和封裝)的故障,以及當今產品中的系統單晶片(SOC)。

《ESD: Failure Mechanisms and Models》是作者關於ESD保護的系列書籍的延續。它是一本必備的參考資料,對於我們進入納米電子時代所面臨的問題有很有價值的洞察力。