Gallium Nitride and Related Materials: Device Processing and Materials Characterization for Power Electronics Applications
暫譯: 氮化鎵及相關材料：功率電子應用的元件處理與材料特性分析

本書介紹了寬帶隙半導體氮化鎵（GaN）及相關材料在功率電子應用中的器件處理和材料特性分析的進展。書中的內容基於美國能源部高級研究計畫局（ARPA-E）多個明確定義且積極管理的計畫的成果。材料分為八個部分，共28章，這些章節由參與ARPA-E計畫的邀請專家撰寫，並包含來自全球幾位積極參與GaN及相關寬帶隙半導體研究與開發的專家的章節。

本書包括GaN功率電子器件和系統的概述，以及對關鍵垂直器件處理挑戰的全面回顧（第一部分），對氮化鎵大塊基板技術的詳細描述（第二部分），對GaN外延生長和處理挑戰的討論（第三部分），對GaN選擇性區域p型摻雜方法及其挑戰的深入檢視，並著眼於機制理解（第四部分），對為了解器件處理挑戰而開發的創新材料特性分析技術的概述（第五部分），對GaN的基本材料特性與其在功率電子中應用的關係的分析（第六部分），對相關早期氮化物寬帶隙材料的開發及其在功率電子和其他應用中的應用的討論（第七部分），最後以對仍需研究和開發的領域的前瞻性討論作結，這些領域旨在推動功率電子利用寬帶隙半導體的極限及潛在的高影響應用領域（第八部分）。

本書旨在成為任何從事垂直架構GaN功率電子及技術的基礎研究或先進開發的人的重要參考資料。預期本書將成為任何從事氮化物半導體材料的科學家和工程師的首選參考，提供有關最先進的處理和特性分析技術的最新資訊，推動GaN的專業知識邁向新的材料和器件前沿。

Isik C. Kizilyalli recently served as the Senior Director of Technology (R&D) Sustainability Accelerator within the Stanford Doerr School of Sustainability. Prior to joining the Accelerator, he was the Associate Director for Technology at the Advanced Research Projects Agency - Energy (ARPA-E). In this role, Dr. Kizilyalli oversaw all technology issues relating to ARPA-E's programs, program development, Program Director and Fellow recruitment, and coordinating project management across the Agency. As an ARPA-E Program Director his focus included power electronics, semiconductor devices, electrification of transportation (aviation, ships, automotive, space) and associated infrastructure, enhanced geothermal systems, subsurface instrumentation and drilling, electric distribution and transmission grids, and grid technologies and resiliency against aging, EMP, space weather, natural disaster, and cyber threats. Before joining ARPA-E, Dr. Kizilyalli served as founder and CEO/CTO of Avogy Inc. and Zolt Inc., venture backed start-ups focused on power electronics. At the 2015 International Consumer Electronics Show (CES) Zolt Inc. was a CES Best of Innovation Awards Honoree, Best Startup CES finalist (by Engadget), a Top Tech of CES nominee (by Digital Trends), and a Top Pick CES (by Laptop Magazine). Previously, he was with AT&T Bell Laboratories and its spinouts for nearly 17 years, followed by Nitronex Corporation, and solar PV startup Alta Devices where his team holds the world record for single junction solar cell conversion efficiency. Dr. Kizilyalli was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2007 for his contributions to "Integrated Circuit Technology". He also received the Bell Laboratories' Distinguished Member of Technical Staff award and the Best Paper Award at the International Symposium on Power Semiconductors and Integrated Circuits (ISPSD) in 2013. Dr. Kizilyalli holds his B.S. in Electrical Engineering, M.S. in Metallurgy, and Ph.D. in Electrical Engineering all from the University of Illinois (Urbana). He has published a Springer-Nature book on Direct Current Fault Protection, more than 100 papers and holds 127 issued U.S. patents.

Jung Han is the William Norton Professor in Technological Innovation and the Chair of Electrical and Computer Engineering at Yale University. His research interests include wide-bandgap semiconductor epitaxy, optoelectronic and microelectronic devices, semiconductor nanotechnology, lasers, VCSELs, and micro-LEDs. He has published more than 380 papers in peer-reviewed journals, and has served as editor of six books and special journal issues. He holds more than 20 U.S. patents and is the co-founder of three startup companies, Saphlux, Ganvix, and InPhred. Prof. Han has received numerous awards including an Department of Commerce R&D 100 Award, MRS Ribbon Award, and EMC Best Paper Award, EPD Award from the Electrochemical Society, and Yale's faculty Innovator Award. He is a member of the Connecticut Academy of Science and Engineering, and a fellow of the Institute of Physics, Institute of Electrical and Electronic Engineers, OPTICA, and National Academy of Inventors. Prior to joining Yale in 2001, Prof. Han was a senior technical staff member at Sandia National Laboratories where he pioneered the growth of AlGaN for UV emitters and the use of in-situ diagnostics during crystal growth, the latter has since been adopted worldwide by the LED industry. Prof. Han graduated from National Taiwan University in 1986, and earned his M.S. and Ph.D. in electrical engineering from Purdue University in 1990 and 1992, respectively.

James S. Speck is a Professor in theMaterials Department at the University of California Santa Barbara. At UCSB, his early work focused on epitaxial oxide films on semiconductors, ferroelectric thin films, and strain relaxation in highly misfitting epitaxial systems. He has worked extensively on the materials science of GaN and related alloys. Major aspects of his work on nitrides include elucidating basic growth modes and defect generation, the development of MBE growth of GaN, and the development of nonpolar and semipolar GaN. Prof. Speck received the Quantum Device Award with Umesh Mishra from the International Symposium on Compound Semiconductors in 2007, he was named an inaugural MRS Fellow in 2008, and received the JJAP Best Paper Award in 2008. In 2009 he received became an APS Fellow. In 2010 he received the IEEE Photonics Society Aron Kressel Award with Steve DenBaars for their work on nonpolar and semipolar GaN-based materials and devices. In 2007, Prof. Speck and his longtime collaborators Steve DenBaars and Shuji Nakamura founded Santa Barbara-based start-up companies Kaai and Soraa to commercialize their work on nonpolar and semipolar nitrides. In 2016 he was elected as a Fellow of the National Academy of Inventors. Prof. Speck has over 950 publications in the referred archival literature. He received his B.S.M.E. degree in metallurgical engineering from the University of Michigan in 1983 and his S.M. and Sc.D. in materials science from the Massachusetts Institute of Technology in 1985 and 1989, respectively.

Eric P. Carlson is currently a Senior Lead Scientist at Booz Allen Hamilton where he supports the DOE's Advanced Research Projects Agency-Energy (ARPA-E) as a technical support contractor. Prior to joining Booz Allen Hamilton, he served 12 years as a Research Specialist in the Compound Semiconductor Solutions Division at Dow Corning Corporation where he developed crystal growth, epitaxy, and characterization of wide band gap semiconductor materials. Before joining Dow Corning Corporation, Dr. Carlson served as the Director of GaN R&D at Kyma Technologies where he was developing bulk GaN wafers. Dr. Carlson is the author and co-author of more than 50 scientific publications and holds 6 patents. He received his B.S. and Ph.D. in materials science and engineering from North Carolina State University in 1993 and 2001, respectively.

Isik C. Kizilyalli 最近擔任史丹佛多爾可持續發展學院的技術高級總監（研發）可持續加速器。在加入該加速器之前，他曾擔任美國能源部高級研究計畫署（ARPA-E）的技術副總監。在這個角色中，Kizilyalli 博士負責監督與 ARPA-E 計畫相關的所有技術問題、計畫開發、計畫總監和研究員的招募，以及協調機構內的專案管理。作為 ARPA-E 的計畫總監，他的重點包括電力電子學、半導體設備、交通運輸的電氣化（航空、船舶、汽車、太空）及相關基礎設施、增強型地熱系統、地下儀器和鑽探、電力分配和傳輸網絡，以及針對老化、電磁脈衝（EMP）、太空天氣、自然災害和網絡威脅的電網技術和韌性。在加入 ARPA-E 之前，Kizilyalli 博士曾擔任 Avogy Inc. 和 Zolt Inc. 的創始人及首席執行官/首席技術官，這兩家公司是專注於電力電子的風險投資初創公司。在 2015 年的國際消費電子展（CES）上，Zolt Inc. 獲得 CES 創新獎最佳榮譽、Engadget 評選的最佳初創公司決賽入圍者、Digital Trends 評選的 CES 頂尖科技提名，以及 Laptop Magazine 評選的 CES 頂尖選擇。此前，他在 AT&T 貝爾實驗室及其衍生公司工作了近 17 年，之後在 Nitronex Corporation 和太陽能光伏初創公司 Alta Devices 工作，他的團隊在單接面太陽能電池轉換效率方面保持世界紀錄。Kizilyalli 博士於 2007 年被選為電氣和電子工程師學會（IEEE）院士，以表彰他對「集成電路技術」的貢獻。他還獲得了貝爾實驗室的傑出技術成員獎和 2013 年國際功率半導體與集成電路研討會（ISPSD）的最佳論文獎。Kizilyalli 博士在伊利諾伊大學（厄本那）獲得電氣工程學士學位、冶金碩士學位和電氣工程博士學位。他已出版一本關於直流故障保護的 Springer-Nature 書籍，發表了超過 100 篇論文，並擁有 127 項美國專利。

Jung Han 是耶魯大學技術創新威廉·諾頓教授及電機與計算機工程系主任。他的研究興趣包括寬帶隙半導體外延、生物電子和微電子設備、半導體納米技術、激光、垂直腔面發射激光器（VCSELs）和微型 LED。他在同行評審的期刊上發表了超過 380 篇論文，並擔任六本書籍和特刊的編輯。他擁有超過 20 項美國專利，並共同創立了三家初創公司，分別是 Saphlux、Ganvix 和 InPhred。Han 教授獲得了多項獎項，包括美國商務部的 R&D 100 獎、MRS 緞帶獎、EMC 最佳論文獎、電化學學會的 EPD 獎，以及耶魯大學的創新獎。他是康乃狄克科學與工程學院的成員，也是物理學會、電氣與電子工程師學會、OPTICA 和全國發明家學院的院士。在 2001 年加入耶魯大學之前，Han 教授曾在桑迪亞國家實驗室擔任高級技術人員，開創了用於紫外線發射器的 AlGaN 生長和在晶體生長過程中使用原位診斷，後者已被 LED 行業全球採用。Han 教授於 1986 年畢業於國立台灣大學，並於 1990 年和 1992 年分別獲得普渡大學的電氣工程碩士和博士學位。

James S. Speck 是加州大學聖塔巴巴拉分校材料系的教授。在 UCSB，他的早期工作專注於半導體上的外延氧化物薄膜、鐵電薄膜以及在高度不匹配的外延系統中的應變鬆弛。他在氮化物及相關合金的材料科學方面進行了廣泛的研究。他在氮化物方面的主要工作包括闡明基本生長模式和缺陷產生、氮化鎵（GaN）的 MBE 生長開發，以及非極性和半極性 GaN 的開發。Speck 教授於 2007 年與 Umesh Mishra 一起獲得國際化合物半導體研討會的量子器件獎，2008 年被評選為首屆 MRS 院士，並於 2008 年獲得 JJAP 最佳論文獎。2009 年，他成為 APS 院士。2010 年，他與 Steve DenBaars 一起因在非極性和半極性 GaN 基材料和設備方面的工作獲得 IEEE 光子學會的 Aron Kressel 獎。2007 年，Speck 教授與他的長期合作者 Steve DenBaars 和 Nakamura Shuji 創立了位於聖塔巴巴拉的初創公司 Kaai 和 Soraa，以商業化他們在非極性和半極性氮化物方面的研究。2016 年，他被選為全國發明家學院的院士。Speck 教授在同行評審的文獻中發表了超過 950 篇論文。他於 1983 年獲得密西根大學的冶金工程學士學位，並於 1985 年和 1989 年分別獲得麻省理工學院的材料科學碩士和科學博士學位。

Eric P. Carlson 目前是 Booz Allen Hamilton 的高級首席科學家，支持美國能源部的高級研究計畫署（ARPA-E）擔任技術支持承包商。在加入 Booz Allen Hamilton 之前，他在道康寧公司（Dow Corning Corporation）的化合物半導體解決方案部門擔任研究專家 12 年，開發寬帶隙半導體材料的晶體生長、外延和表徵。在加入道康寧公司之前，Carlson 博士曾擔任 Kyma Technologies 的 GaN 研發總監，開發大塊 GaN 晶圓。Carlson 博士是超過 50 篇科學出版物的作者和合著者，並擁有 6 項專利。他於 1993 年和 2001 年分別在北卡羅來納州立大學獲得材料科學與工程的學士和博士學位。