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商品描述
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
作者簡介
From 1979, he has been teaching annual courses in the Faculty of Engineering of the University of Bologna, firstly as Lecturer and then as Associate Professor. In 1990, he became Full Professor of Microelectronics at the University of Bologna. An IEEE Fellow (2008) and Life Fellow (2014), M.R. is author, coauthor or editor of 12 books, and has authored or coauthored about 250 technical papers published in major journals, or presented in international conferences, in the fields of electronics, solid-state physics, and solid-state sensors.
M.R. has coordinated several research projects funded by the European Commission, international Companies and Foundations, the National Council of Research, and the National Ministry of University and Research. In 2001, he was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna.
