Zno Thin-Film Transistors for Cost-Efficient Flexible Electronics
暫譯: Zno 薄膜電晶體於成本效益的柔性電子產品

本書描述了成本效益高的薄膜電晶體（TFT）的整合、特性化和分析，並應用氧化鋅作為主動半導體。作者討論了可溶性閘極介電材料、ZnO 前驅物以及含有材料奈米結構的分散液，同時分析了不同的電晶體配置在整合性、相容性和裝置性能方面的表現。此外，書中還介紹並討論了簡單電路（反相器和環形振盪器）以及使用（有機或無機）半導體材料的互補設計。讀者將從有關成本效益材料和工藝的簡明資訊中受益，這些材料和工藝應用於柔性和透明電子技術，例如使用基於溶液的材料和含有奈米結構的分散液，以及對薄膜電晶體運作的物理基本原理和裝置的非理想性進行討論。

Fábio Fedrizzi Vidor received in 2011 the B.Sc. degree in Electrical Engineering and in 2012 the M.Sc. degree in Microelectronics, both from the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2017, he received the Dr.-Ing. degree in Electrical Engineering from the Paderborn University, Germany. He is currently a postdoctoral researcher at the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2009, he participated in the micro and nanoelectronic cooperation program at the State University of New York at Buffalo (SUNY), USA. In 2010 and 2011, he worked in the Prototyping and Testing Laboratory at UFRGS (LAPROT-UFRGS), developing transistor characterization methods and working at the performance enhancement of ZnO transistors in cooperation with the Paderborn University, Germany. In 2012, as a research assistant in the Post-Graduate Program on Microelectronic (PGMICRO-UFRGS), he worked on ZnO TFT reliability. From 2013 to 2017, he worked as a research assistant at the Paderborn University in the field of complementary TFTs with (in)organic semiconductors. His current research interests include fabrication, characterization, modeling and reliability of ZnO based and complementary TFTs and flexible electronics..

Gilson I. Wirth received the B.S.E.E and M.Sc. degrees from the Universidade Federal do Rio Grande do Sul, Brazil, in 1990 and 1994, respectively. In 1999 he received the Dr.-Ing. degree in Electrical Engineering from the University of Dortmund, Dortmund, Germany. He is currently a professor at the Electrical Engineering Department at the Universidade Federal do Rio Grande do Sul - UFRGS (since January 2007), where he was the head of graduate and undergraduate courses. From July 2002 to December 2006 he was professor and head of the Computer Engineering Department, Universidade Estadual do Rio Grande do Sul (UERGS). His research work is focused on reliability and yield of MOS devices and circuits, including low-frequency noise, bias temperature instability (BTI), radiation effects, and design techniques to improve yield and reliability. He has stablished successful collaborative work with different companies and research groups in Europe, North and South America.

Ulrich Hilleringmann has been Professor of the Sensor Technology Group, Paderborn University, in Paderborn, Germany since 1999. He studied physics at University of Dortmund from 1978 to 1984 and subsequently joined the Fraunhofer Institute for Microelectronics and Systems, Duisburg, for two years. Thereafter he changed to the Electrical Engineering Department at University of Dortmund. There he did his PhD in 1988 and became assistant professor in 1994. In 1999 he got professor in Paderborn. Since 1984 his main interests include microelectronics, processing of semiconductor devices and microelectromechanical systems. His research work focuses on short channel field effect transistors, flexible electronics using organic or nanoparticle semiconductors, thermoelectric generators, surface acoustic wave sensors, RFID systems, and integrated optics on silicon.

法比奧·費德里茲·維多（Fábio Fedrizzi Vidor）於2011年獲得巴西南大河聯邦大學（Federal University of Rio Grande do Sul, UFRGS）電機工程學士學位，並於2012年獲得微電子碩士學位。2017年，他在德國帕德博恩大學（Paderborn University）獲得電機工程博士學位。目前，他是巴西南大河聯邦大學（UFRGS）的博士後研究員。2009年，他參加了美國紐約州立大學水牛城分校（State University of New York at Buffalo, SUNY）的微電子與奈米電子合作計畫。2010年和2011年，他在UFRGS的原型設計與測試實驗室（LAPROT-UFRGS）工作，開發晶體管特性測試方法，並與德國帕德博恩大學合作提升ZnO晶體管的性能。2012年，作為微電子研究生課程（PGMICRO-UFRGS）的研究助理，他研究了ZnO薄膜晶體管的可靠性。從2013年到2017年，他在帕德博恩大學擔任研究助理，專注於使用（有機）半導體的互補薄膜晶體管。目前他的研究興趣包括基於ZnO的互補薄膜晶體管及柔性電子的製造、特性測試、建模和可靠性。

吉爾森·I·維爾斯（Gilson I. Wirth）於1990年和1994年分別獲得巴西南大河聯邦大學（Universidade Federal do Rio Grande do Sul）電機工程學士和碩士學位。1999年，他在德國多特蒙德大學（University of Dortmund）獲得電機工程博士學位。目前，他是巴西南大河聯邦大學（UFRGS）電機工程系的教授（自2007年1月起），曾擔任研究生和本科課程的負責人。從2002年7月到2006年12月，他擔任巴西南大河州立大學（Universidade Estadual do Rio Grande do Sul, UERGS）計算機工程系的教授及系主任。他的研究工作專注於MOS器件和電路的可靠性和良率，包括低頻噪聲、偏壓溫度不穩定性（BTI）、輻射效應以及改善良率和可靠性的設計技術。他與歐洲、北美和南美的不同公司和研究團隊建立了成功的合作關係。

烏爾里希·希勒林根曼（Ulrich Hilleringmann）自1999年以來一直擔任德國帕德博恩大學（Paderborn University）傳感器技術組的教授。他於1978年至1984年在多特蒙德大學（University of Dortmund）學習物理，隨後在德國杜伊斯堡的弗勞恩霍夫微電子與系統研究所工作了兩年。之後，他轉到多特蒙德大學的電機工程系。在那裡，他於1988年獲得博士學位，並於1994年成為助理教授。1999年，他在帕德博恩大學獲得教授職位。自1984年以來，他的主要研究興趣包括微電子、半導體器件的加工和微機電系統。他的研究工作專注於短通道場效應晶體管、使用有機或奈米顆粒半導體的柔性電子、熱電發電機、表面聲波傳感器、RFID系統和硅上的集成光學。