Nanoelectronics and Information Technology, 3/e (Hardcover)
Rainer Waser
- 出版商: Wiley
- 出版日期: 2012-05-29
- 售價: $4,380
- 貴賓價: 9.5 折 $4,161
- 語言: 英文
- 頁數: 1040
- 裝訂: Hardcover
- ISBN: 3527409270
- ISBN-13: 9783527409273
海外代購書籍(需單獨結帳)
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商品描述
Each subject area is opened by a tutorial introduction, written by the editor and giving a rich list of references. The following chapters provide a concise yet in-depth description in a given topic. The obvious strength of the book is its encyclopedic character, providing adequate background material instead of just reviewing current trends. The reader benefits from the clear structure which reduces overlap or repetition to a minimum.
This third edition is completely revised and contains to a third absolutely new content ranging from fundamental aspects, now including mesoscopic electron transport, to advanced technological solutions. The second section, which is focused on processing and characterization, holds new chapters on nanoimprint lithography, 3-D integration technology, scanning probe manipulation of materials and bottom-up approaches. The former parts on RAM and Mass Storage Devices now belong to a coupled section with new contributions on floating gate as well as and electrochemical and thermochemical memories. This allows more space for a new section devoted to computational concepts and systems. The part devoted data transmission and interfaces henceforth includes the discussion of interconnects and RFID Technology. The contributions on sensors and imaging systems are substantially updated, and the last part of the book which summarizes various display technologies is complemented by a chapter on micro-mirror displays.
This textbook is primarily aimed at graduate students of physics, electrical engineering and information technology as well as material science. It is equally of interest to professionals wanting a broader overview of this hot topic. Experts might appreciate the book for having quick access to principles as well as a source for getting insight into related fields.