ESD Physics and Devices (Hardcover)

Steven H. Voldman

  • 出版商: Wiley
  • 出版日期: 2004-10-29
  • 售價: $6,400
  • 貴賓價: 9.5$6,080
  • 語言: 英文
  • 頁數: 420
  • 裝訂: Hardcover
  • ISBN: 0470847530
  • ISBN-13: 9780470847534
  • 相關分類: 物理學 Physics
  • 海外代購書籍(需單獨結帳)

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商品描述

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials.

  • Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena.
  • Analyses the behaviour of semiconductor devices under ESD conditions.
  • Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits.
  • Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time.
  • Discusses the design and development implications of ESD in semiconductor technologies.

An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

商品描述(中文翻譯)

本書是一系列三本書籍中的第一本,探討了靜電放電(ESD)物理、器件、電路和設計在整個集成電路技術範圍內的應用。《ESD物理與器件》簡要介紹了ESD現象和在ESD條件下運作的器件的物理特性。Voldman為需要在這一重要領域中建立堅實基礎的工程師和研究人員提供了一個易於理解的入門指南。本書涵蓋了先進的CMOS、絕緣體上的矽、矽鍺和矽鍺碳等技術。此外,它還討論了先進CMOS中的ESD問題,包括對淺沟槽隔離(STI)、銅和低介電常數材料的討論。


  • 提供對ESD器件物理和ESD現象基礎的清晰理解。

  • 分析半導體器件在ESD條件下的行為。

  • 解決了ESD現象對先進集成電路產生的問題的日益關注。

  • 首次涵蓋了CMOS、絕緣體上的矽(SOI)、BiCMOS和BiCMOS SiGe(矽鍺)技術的ESD測試、失效標準和縮放理論。

  • 討論了ESD對半導體技術的設計和開發影響。

對於在IC和晶體管設計領域工作的非專業EMC工程師和研究人員來說,這是一本寶貴的參考資料。同樣適合在器件/電路建模和半導體可靠性領域進行研究的研究人員和高級學生。