2D Nanomaterials and Devices for Flexible Electronics
暫譯: 柔性電子的二維奈米材料與裝置
Raj, Balwinder, Saxena, Shobhit, Yadav, Nandakishor
- 出版商: CRC
- 出版日期: 2026-01-08
- 售價: $8,950
- 貴賓價: 9.8 折 $8,771
- 語言: 英文
- 頁數: 350
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1032876263
- ISBN-13: 9781032876269
-
相關分類:
電路學 Electric-circuits
海外代購書籍(需單獨結帳)
商品描述
The text explains 2D materials, nanodevices, and analysis of their design parameters to meet the sub-nano-regime challenges for complementary metal-oxide-semiconductor devices.
商品描述(中文翻譯)
這段文字解釋了二維材料、納米裝置,以及它們的設計參數分析,以應對互補金屬氧化物半導體(complementary metal-oxide-semiconductor)裝置在亞納米範疇中的挑戰。
作者簡介
Balwinder Raj is currently working as an Associate Professor at National Institute of Technology, Jalandhar, India. He has more than 15 years of teaching and research experience. His areas of interest in research includes Classical/Non-Classical Nanoscale Semiconductor Device Modeling, Nanoelectronic and their applications in hardware security, sensors and circuit design, FinFET based Memory design, Low Power VLSI Design, Digital/Analog VLSI Design and FPGA implementation.
Shobhit Saxena is an Assistant Professor in the Department of Electronics & Communication Engineering at Chaudhary Charan Singh University, Meerut. He received his PhD degree from the Indian Institute of Technology (IIT), Dhanbad, in 2022. His current research interest includes printed antennas, the effect of RF-EMF on the environment, nanomaterials and flexible electronics.
Nandakishor Yadav is currently working as a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany. He has more than 10-years of experience in the field of research and teaching.
Tarun Chaudhary is currently working as an Assistant Professor in ECE Department, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Her present research is largely focused on the design and modeling of nanoscale devices, TFETs, Junctionless devices and Low power VLSI Design Circuits.
Mandeep Singh has done his B.Tech in Electronics & Communication Eng. & M.tech ECE (VLSI DESIGN) from Punjabi University Patiala and PhD from NIT, Jalandhar. Currently, he is working as Postdoc Fellow at the Indian Institute of Technology, Kanpur. His areas of research are semiconductor device modelling, memory design, CNT & Nanowire, FeFET, Ferroelectric Memory and low power VLSI design.
作者簡介(中文翻譯)
Balwinder Raj 目前擔任印度賈蘭達爾國立技術學院的副教授。他擁有超過15年的教學和研究經驗。他的研究興趣包括經典/非經典納米尺度半導體器件建模、納米電子學及其在硬體安全、感測器和電路設計中的應用、基於FinFET的記憶體設計、低功耗VLSI設計、數位/類比VLSI設計以及FPGA實作。
Shobhit Saxena 是梅魯特查烏達里查蘭辛大學電子與通信工程系的助理教授。他於2022年在印度理工學院(IIT)丹巴德獲得博士學位。他目前的研究興趣包括印刷天線、射頻電磁場對環境的影響、納米材料和柔性電子學。
Nandakishor Yadav 目前在德國德累斯頓的弗勞恩霍夫光子微系統研究所擔任高級科學家。他在研究和教學領域擁有超過10年的經驗。
Tarun Chaudhary 目前在印度賈蘭達爾的B.R. Ambedkar國立技術學院電子與通信工程系擔任助理教授。她目前的研究主要集中在納米尺度器件的設計和建模、隧道場效應晶體管(TFET)、無接面器件以及低功耗VLSI設計電路。
Mandeep Singh 在旁遮普大學帕提亞拉獲得電子與通信工程的學士學位及VLSI設計的碩士學位,並在賈蘭達爾國立技術學院獲得博士學位。目前,他在印度理工學院坎普爾擔任博士後研究員。他的研究領域包括半導體器件建模、記憶體設計、碳納米管(CNT)與納米線、FeFET、鐵電記憶體及低功耗VLSI設計。