Gallium Nitride (GaN): Physics, Devices, and Technology (Devices, Circuits, and Systems)

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商品描述

Addresses a Growing Need for High-Power and High-Frequency Transistors

Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.

Explores Recent Progress in High-Frequency GaN Technology

Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.

In addition, the authors:

  • Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
  • Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
  • Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
  • Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers

A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

商品描述(中文翻譯)

《氮化鎵(GaN):物理、器件和技術》是一本關於氮化鎵技術的最新綜述。氮化鎵是一種常用於亮度高的發光二極體的半導體,可作為微電子器件的理想替代品。它具有寬帶隙和高電子遷移率,使其在光電子、高功率和高頻率器件應用中具有特殊性能。由於其高斷電強度和優異的通道導電性,氮化鎵是開關功率晶體管的理想選擇。

本書由來自世界各地的學術和工業專家組成的團隊撰寫,評估了適用於高頻、高功率應用的基於氮化鎵材料系統的優勢。它概述了半導體環境,概述了氮化鎵的基本器件物理,並描述了微電子和光電子的下一階段所需的氮化鎵材料和器件結構。本書詳細介紹了射頻(RF)半導體器件和電路的發展,考慮了行業目前面臨的挑戰,並探討了未來的趨勢。

此外,作者還提出了以下觀點:
- 提出了一種設計,可以使用帶間隧道接點(TJ)互連將多個LED堆疊連接成串
- 檢視了氮化鎵技術在商業和軍事產品中大規模部署的早期階段
- 考慮了太陽能和氫能作為這項技術的有前途和重要能源的潛力使用
- 引入了兩種獨特的方法,PEC氧化和蒸汽冷凝方法,用於高質量氧化物層的沉積

《氮化鎵(GaN):物理、器件和技術》是學生和專業人士的單一來源參考資料,提供了對半導體環境的整體評估,討論了GaN技術在射頻半導體器件中的潛在應用,並突出了GaN的當前和新興應用。