Ion Implantation and Annealing Applications, Science and Technology: Contributions from Iit School, Edition 2026
暫譯: 離子植入與退火應用、科學與技術:來自IIT學院的貢獻,2026年版

Lerch, Wilfried, Current, Michael I.

  • 出版商: Springer
  • 出版日期: 2026-09-04
  • 售價: $8,030
  • 貴賓價: 9.5$7,628
  • 語言: 英文
  • 頁數: 776
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 3032311721
  • ISBN-13: 9783032311726
  • 相關分類: 半導體
  • 海外代購書籍(需單獨結帳)

商品描述

This book is a new, comprehensive, tutorial-style reference from the IIT2026 school that unifies ion implantation and annealing, guiding the reader from historical context and fundamental beam physics through to full process integration in advanced semiconductor manufacturing. It uniquely combines rigorous coverage of ion sources, beam transport, implanter and annealer hardware, and state of the art thermal processing for Si, Ge, SiC, GaN, and other materials with a practical comparison of commercial tool platforms. Dedicated materials science chapters explain implantation induced defects in key semiconductor materials, their evolution during annealing, and the diffusion and dopant activation mechanisms that ultimately determine device performance, variability, and reliability. Extensive treatments of metrology, contamination control, and safety, together with forward looking application chapters for logic, memory, image sensors, and power devices, make the volume both an ideal introduction for newcomers and an authoritative reference for experienced engineers and scientists.

商品描述(中文翻譯)

這本書是來自IIT2026學校的一本全新、全面的教程式參考書,統一了離子植入和退火,指導讀者從歷史背景和基本束流物理學開始,直到在先進半導體製造中的完整過程整合。它獨特地結合了對離子源、束流傳輸、植入機和退火機硬體的嚴謹覆蓋,以及對矽(Si)、鍺(Ge)、碳化矽(SiC)、氮化鎵(GaN)和其他材料的最先進熱處理的實用比較。專門的材料科學章節解釋了關鍵半導體材料中植入引起的缺陷、它們在退火過程中的演變,以及最終決定器件性能、變異性和可靠性的擴散和摻雜劑活化機制。對計量學、污染控制和安全的廣泛探討,加上針對邏輯、記憶體、影像感測器和功率器件的前瞻性應用章節,使這本書成為新手的理想入門書籍,同時也是經驗豐富的工程師和科學家的權威參考資料。