Introduction to Nanoelectronic Single-Electron Circuit Design,2/e (Hardcover)

Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science.

Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.

今天，單電子隧道（SET）的概念被用來理解和模擬單原子和單分子納米電子學。納米電子器件的特性，特別是SET晶體管，可以基於納米電子器件和電路模型的物理來理解。電路理論方法對於考慮與當前微電子電路的可能整合是必要的。為了解釋SET器件的特性和可能性，本書遵循使用電子電路理論對這些器件進行建模的方法。所有模型和等效電路都是從電路理論的第一原理推導出來的。基於能量守恆，SET的電路模型是一個衝擊電流源，建模區分有界和無界電流。庫倫阻塞被解釋為單個接點的特性。此外，本版與上一版不同之處在於詳細說明了關於spice模擬的部分，並提供了關於SET電子盒電路的spice模擬，包括spice網表。此外，還提供了電路理論中兩電容問題的完整新證明；這個證明在理解SET電路中的能量守恆方面的重要性不可低估。本書對於電氣工程和納米電子學的高年級本科生和研究生以及納米技術、納米電子器件物理和計算機科學的研究人員非常有用。本書是唯一一本從電子學的角度對單電子隧道和多電子隧道進行建模的書籍；從實驗開始，通過物理描述，逐步發展成電路描述；並基於電路中的能量守恆，發展出單電子隧道的衝擊電路模型。