Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation (Hardcover)

Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices.

With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software.

The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme.

Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.

從最簡單的半經典方法開始，到描述最先進裝置的量子傳輸分析的複雜全量子力學方法，《計算電子學：半經典和量子裝置建模與模擬》提供了對有效分析半導體裝置傳輸的基本技術和方法的全面概述。

隨著晶體管接近極限，並且新的裝置設計和操作範式正在探索中，這本及時的資源提供了模擬方法，以正確地模擬最先進的納米級裝置。第一部分介紹了半經典傳輸方法，包括用於解決玻爾茲曼傳輸方程的漂移擴散、流體力學和蒙特卡羅方法。提供了有關數值實現和示例代碼的詳細信息，作為複雜模擬軟件的模板。

第二部分介紹了密度梯度方法、量子流體力學以及用於考慮基於粒子的模擬器中的量子力學空間量子化效應的有效勢概念。強調了量子傳輸方法的必要性，並描述了出現在目前和未來大量生產或概念驗證中的各種量子效應。在這個背景下，介紹了用於在半經典基於粒子的裝置模擬方案中近似包含量子力學空間量子化效應的有效勢概念。

解決計算電子學的實際問題，這本權威資源最後討論了大多數書籍未涵蓋的有關量子傳輸的一些未解決問題。配有自學問題和眾多示例，本書為讀者提供了創建自己模擬器所需的實際理解能力。