Intelligent Integrated Systems: Devices, Technologies, and Architectures (Hardcover)
暫譯: 智能整合系統:裝置、技術與架構(精裝版)
Simon Deleonibus
- 出版商: Pan Stanford Publish
- 出版日期: 2014-04-09
- 售價: $6,280
- 貴賓價: 9.5 折 $5,966
- 語言: 英文
- 頁數: 516
- 裝訂: Hardcover
- ISBN: 9814411426
- ISBN-13: 9789814411424
-
相關分類:
半導體
海外代購書籍(需單獨結帳)
買這商品的人也買了...
-
高頻通訊電路設計$600$588 -
Quantum Transport : Atom to Transistor$5,900$5,605 -
數位積體電路分析與設計 (Analysis and Design of Digital Integrated Circuits)$650$585 -
半導體元件概論 (Fundamentals of Semiconductor Devices)$780$764 -
The Physics And Modeling of Mosfets (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology (Asset)) (Hardcover)$1,500$1,470 -
$1,230Microelectronic Circuits: Analysis and Design, 2/e (IE-Paperback) -
C++ Primer Plus, 6/e (中文版) (C++ Primer Plus, 6/e (Developer's Library))$780$616 -
Semiconductor Process Reliability in Practice (Hardcover)$6,570$6,242 -
Quantum Mechanics (2 vol. set) (Paperback)$8,680$8,246 -
圖解組合語言, 2/e$520$406 -
Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield (Hardcover)$4,420$4,199 -
Nanoelectronic Circuit Design (Hardcover)$6,800$6,460 -
Robust SRAM Designs and Analysis (Hardcover)$6,280$5,966 -
Design of Analog CMOS Integrated Circuits, 2/e (IE-Paperback)$1,600$1,568 -
Gravitation (Hardcover)$2,500$2,450 -
積體電路測試實務, 2/e$300$270 -
Electric Circuits, 11/e (GE-Paperback)$1,560$1,529 -
$1,744Physics of Semiconductor Devices, 4/e (Hardcover) -
射頻電路設計 — 理論與應用, 2/e$474$450 -
演算法, 4/e$460$451 -
A Course of Pure Mathematics, 3/e (Paperback)$1,270$1,207 -
普通化學分章試題解析 (上), 9/e (適用: 後西醫.後中醫.私醫聯招)$680$612 -
普通化學分章試題解析 (下), 9/e (適用: 後西醫.後中醫.私醫聯招)$680$612 -
量子力學概論 (原書第3版)$888$844
相關主題
商品描述
This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.
商品描述(中文翻譯)
本書由國際知名研究者提供了突破性裝置架構的最新概述,這些裝置是未來智能集成系統所需的。第一部分重點介紹先進的矽基 CMOS 技術。關於 隧道場效應晶體管 和 三維單體集成 的章節中回顧了新型裝置和功能架構,未來可能使用的替代材料。通過與矽 CMOS 共同集成或在其上方集成新型裝置,例如基於分子和電阻自旋電子學的記憶體及智能感測器,來展示我們如何增強矽技術的方式,這些裝置使用了納米級特徵。
