The Semiconductor Manufacturing Research Handbook
暫譯: 半導體製造研究手冊

Shan, XI

  • 出版商: Independently Published
  • 出版日期: 2025-01-11
  • 售價: $2,280
  • 貴賓價: 9.8$2,234
  • 語言: 英文
  • 頁數: 304
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 9798306627632
  • ISBN-13: 9798306627632
  • 相關分類: 半導體
  • 海外代購書籍(需單獨結帳)

商品描述

Elevate your semiconductor research with this comprehensive guide packed with detailed discussions on the latest breakthroughs and best practices in semiconductor manufacturing. Intended for engineers, researchers, and industry professionals, this indispensable resource delivers critical insights that bridge theory and practical implementation in modern fabs. From innovative doping materials that push device performance limits to cutting-edge packaging solutions integrating 2.5D and 3D methodologies, every section is meticulously written to help you stay at the forefront of the field.

Discover:

  • Refine plasma etching parameters to achieve higher anisotropy at sub-5 nm nodes.
  • Introduce next-generation gate dielectrics with minimized leakage current.
  • Integrate wide-bandgap materials (like GaN and SiC) onto silicon platforms for high-efficiency power devices.
  • Adopt advanced cleaning protocols to reduce particle contamination and defect densities.
  • Optimize atomic layer deposition techniques for ultra-uniform thin-film growth.
  • Execute hybrid bonding in advanced packaging for ultra-fine pitch interconnects.

Each chapter is informed by both academic research and real-world fab experiences, making this an essential reference for anyone aiming to enhance yield, improve reliability, and develop tomorrow's semiconductor innovations today. Whether you are driving process developments for emerging device architectures or refining established production lines, you will gain the clarity and confidence to move your projects from concept to commercialization.

商品描述(中文翻譯)

提升您的半導體研究,這本全面指南包含了有關半導體製造最新突破和最佳實踐的詳細討論。這本不可或缺的資源旨在為工程師、研究人員和業界專業人士提供關鍵見解,橋接理論與現代晶圓廠的實際應用。從推動設備性能極限的創新摻雜材料到整合2.5D和3D方法的尖端封裝解決方案,每一部分都經過精心撰寫,幫助您保持在該領域的最前沿。

發現:



  • 精煉等離子蝕刻參數,以在小於5納米的節點上實現更高的各向異性。

  • 引入下一代閘極介電材料,以最小化漏電流。

  • 寬帶隙材料(如GaN和SiC)整合到矽平台上,以實現高效率的功率設備。

  • 採用先進清潔協議以減少顆粒污染和缺陷密度。

  • 優化原子層沉積技術,以實現超均勻的薄膜生長。

  • 在先進封裝中執行混合鍵合,以實現超細間距互連。

每一章節都基於學術研究和實際晶圓廠經驗,使這本書成為任何希望提高良率、改善可靠性並在今天開發明天半導體創新者的重要參考。無論您是在推動新興設備架構的工藝開發,還是精煉既有生產線,您都將獲得清晰度和信心,將您的項目從概念推進到商業化。