Introduction to Magnetic Random-Access Memory (Hardcover)

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory that is based on complementary metal-oxide semiconductors. This book serves as an ideal introduction to MRAM for microelectronic engineers and is written by specialists in magnetic materials and devices. Presenting readers with the fundamentals of magnetic materials and technology, this resource helps bridge the cultural gap between the microelectronics and magnetics communities.

磁性隨機存取記憶體（MRAM）有望取代基於互補金屬氧化物半導體的傳統電腦記憶體。這本書是磁性材料和裝置專家撰寫的，為微電子工程師提供了關於MRAM的理想入門。本資源向讀者介紹了磁性材料和技術的基礎知識，有助於彌合微電子和磁性社群之間的文化差距。