Strain-Induced Effects in Advanced MOSFETs (Hardcover)
Viktor Sverdlov
- 出版商: Springer
- 出版日期: 2010-11-24
- 售價: $6,660
- 貴賓價: 9.5 折 $6,327
- 語言: 英文
- 頁數: 252
- 裝訂: Hardcover
- ISBN: 3709103819
- ISBN-13: 9783709103814
海外代購書籍(需單獨結帳)
買這商品的人也買了...
-
高頻通訊電路設計$600$588 -
Quantum Transport : Atom to Transistor$5,600$5,320 -
數位積體電路分析與設計 (Analysis and Design of Digital Integrated Circuits)$650$585 -
半導體元件概論 (Fundamentals of Semiconductor Devices)$780$764 -
The Physics And Modeling of Mosfets (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology (Asset)) (Hardcover)$1,500$1,470 -
Microelectronic Circuits: Analysis and Design, 2/e (IE-Paperback)$1,230$1,205 -
C++ Primer Plus, 6/e (中文版) (C++ Primer Plus, 6/e (Developer's Library))$780$616 -
Semiconductor Process Reliability in Practice (Hardcover)$6,010$5,710 -
Quantum Mechanics (2 vol. set) (Paperback)$9,170$8,712 -
圖解組合語言, 2/e$520$406 -
Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield (Hardcover)$4,430$4,209 -
Nanoelectronic Circuit Design (Hardcover)$6,800$6,460 -
Robust SRAM Designs and Analysis (Hardcover)$6,290$5,976 -
Design of Analog CMOS Integrated Circuits, 2/e (IE)$1,600$1,520 -
Gravitation (Hardcover)$2,500$2,450 -
積體電路測試實務, 2/e$300$270 -
Electric Circuits, 11/e (GE-Paperback)$1,460$1,431 -
$1,691Physics of Semiconductor Devices, 4/e (Hardcover) -
射頻電路設計 — 理論與應用, 2/e$474$450 -
演算法, 4/e$460$437 -
A Course of Pure Mathematics, 3/e (Paperback)$1,270$1,207 -
普通化學分章試題解析 (上), 9/e (適用: 後西醫．後中醫．私醫聯招)$680$612 -
普通化學分章試題解析 (下), 9/e (適用: 後西醫．後中醫．私醫聯招)$680$612 -
量子力學概論 (原書第3版)$888$844
商品描述
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
