Strain-Induced Effects in Advanced MOSFETs (Hardcover)
暫譯: 先進MOSFET中的應變誘導效應 (精裝版)
Viktor Sverdlov
- 出版商: Springer
- 出版日期: 2010-11-24
- 售價: $6,630
- 貴賓價: 9.5 折 $6,299
- 語言: 英文
- 頁數: 252
- 裝訂: Hardcover
- ISBN: 3709103819
- ISBN-13: 9783709103814
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相關分類:
電機學 Electric-machinery
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商品描述
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
商品描述(中文翻譯)
應變用於提升MOSFET的性能。模擬應變對傳輸影響的建模是現代模擬工具在設備設計中所需的重要任務。本書涵蓋了所有相關的建模方法，用於描述矽中的應變。使用解析的k.p方法和數值的偽勢方法，研究了受應力半導體薄膜中的子帶結構。對於受應變設備中的傳輸建模提供了嚴謹的概述。
